Sensitivity enhancement of AlGaAs/InGaAs/GaAs quantum well-based Hall device

被引：0
|
作者：
Sghaier, H. [1 ]
Bouzaiene, L. [1 ]
Sfaxi, L. [1 ]
Maaref, H. [1 ]
机构：
[1] Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir, Tunisia
来源：
Journal of Applied Physics | 2006年 / 100卷 / 04期
关键词：
We have investigated the consequences of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs and we propose a quantum well structure for a Hall device with the goal of improving its performances. From self-consistent calculations we find that the electron concentration n s in the interface region is increased. This implies that one can have a wider spacer layer and still have the same ns with the result that the mobility is improved. This result should be valuable for many types of devices. We specifically consider Hall sensors; where it is desirable to have a low electron concentration and a high mobility. © 2006 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [31] InGaAs/GaAs photorefractive multiple quantum well device in quantum confined Stark geometry
    Kageshima, H
    Iwamoto, S
    Nishioka, M
    Someya, T
    Fukutani, K
    Arakawa, Y
    Shimura, T
    Kuroda, K
    APPLIED PHYSICS B-LASERS AND OPTICS, 2001, 72 (06): : 685 - 689
  • [32] Electron mobility in a AlGaAs/GaAs/AlGaAs quantum well
    V. G. Mokerov
    G. B. Galiev
    J. Pozela
    K. Pozela
    V. Juciene
    Semiconductors, 2002, 36 : 674 - 678
  • [33] LASING QUANTUM-WELL OPTOELECTRONIC SWITCH (QWOES) BASED ON ALGAAS/GAAS/INGAAS DOUBLE-HETEROSTRUCTURE
    YARN, KF
    WANG, YH
    CHEN, MS
    ELECTRONICS LETTERS, 1995, 31 (13) : 1063 - 1064
  • [34] InGaAs/GaAs photorefractive multiple quantum well device in quantum confined Stark geometry
    H. Kageshima
    S. Iwamoto
    M. Nishioka
    T. Someya
    K. Fukutani
    Y. Arakawa
    T. Shimura
    K. Kuroda
    Applied Physics B, 2001, 72 : 685 - 689
  • [35] Electron mobility in a AlGaAs/GaAs/AlGaAs quantum well
    Mokerov, VG
    Galiev, GB
    Pozela, J
    Pozela, K
    Juciene, V
    SEMICONDUCTORS, 2002, 36 (06) : 674 - 678
  • [36] THEORY OF THE GAAS/ALGAAS QUANTUM WELL
    EPPENGA, R
    SCHUURMANS, MFH
    PHILIPS TECHNICAL REVIEW, 1988, 44 (05): : 137 - 149
  • [37] HIGH-SENSITIVITY HALL SENSORS WITH LOW THERMAL DRIFT USING ALGAAS/INGAAS/GAAS HETEROSTRUCTURES
    MOSSER, V
    CONTRERAS, S
    ABOULHOUDA, S
    LORENZINI, P
    KOBBI, F
    ROBERT, JL
    ZEKENTES, K
    SENSORS AND ACTUATORS A-PHYSICAL, 1994, 43 (1-3) : 135 - 140
  • [38] Sensitivity enhancement of AlGaAs/GaAs heterojunction-based Hall sensor designed for low magnetic field measurements
    Sghaier, H
    Sfaxi, L
    Bouzaïene, L
    Maaref, H
    SENSORS AND ACTUATORS A-PHYSICAL, 2004, 113 (02) : 147 - 150
  • [39] LINEWIDTH ENHANCEMENT FACTOR IN GAAS/ALGAAS MULTI-QUANTUM-WELL LASERS
    OGASAWARA, N
    ITO, R
    MORITA, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L519 - L521
  • [40] Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device
    Masubuchi, S.
    Hamaya, K.
    Machida, T.
    APPLIED PHYSICS LETTERS, 2006, 89 (20)
12345