Advances in defect characterization techniques using polarized light observation in SiC wafers for power devices

被引：1

作者：

Harada, Shunta ^{[1
,2
]}

Murayama, Kenta ^{[3
]}

机构：

[1] Nagoya Univ, Inst Mat & Syst Sustainabil IMaSS, Ctr Integrated Res Future Elect CIRFE, Furo Cho,Chikusa Ku, Nagoya 4648601, Japan

[2] Nagoya Univ, Dept Mat Proc Engn, Furo Cho,Chikusa Ku, Nagoya 4648603, Japan

[3] Mipox Corp, 18 Satsuki Cho, Kanuma, Tochigi 3220014, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2025年 / 650卷

关键词：

Silicon carbide (SiC); Birefringence; Dislocation; Polarized light microscopy; EPITAXIAL-GROWTH; BIREFRINGENCE; DISLOCATIONS; SCREW;

D O I：

10.1016/j.jcrysgro.2024.127982

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This short review provides an overview of advancements in the characterization of defects in silicon carbide (SiC) wafers using polarized light observation. SiC, which has a wide bandgap and excellent thermal and electrical properties, is widely used in power devices. However, various defects such as threading screw dislocations (TSD), threading edge dislocations (TED), and basal plane dislocations (BPD) can significantly affect device performance and reliability. Polarized light observation offers a nondestructive method for visualizing these defects and analyzing the stress fields induced within the SiC crystal structure. This paper summarizes recent developments in this technique, including the application of analyzer rotation to enhance the contrast in defect visualization. Furthermore, the development of automated systems for rapid wafer evaluation is discussed, highlighting the role of polarized light observation in improving quality control and production efficiency in SiC power device manufacturing.

引用

页数：6

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