Properties analysis of Mn-doped ZnO piezoelectric films

被引：0
|
作者：
Wang, Jing [1 ,4 ]
Chen, Wen [2 ]
Wang, Minrui [3 ,4 ]
机构：
[1] School of Electronic and Information Engineering, Dalian University of Technology, Dalian, 116023, China
[2] Department of Physics, Dalian University of Technology, Dalian, 116023, China
[3] MST Research Center, Dalian University of Technology, Dalian, 116023, China
[4] Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116023, China
来源：
Journal of Alloys and Compounds | 2008年 / 449卷 / 1-2期
关键词：
The Mn-doped ZnO piezoelectric films were prepared by sol-gel method. The ZnO films with perfect c-axis orientation were obtained in the annealing temperature range of 470-700 °C when 1% Mn ion (molar percent) was doped into precursor sol. The resistivity of the ZnO films annealed at 600 °C increased from 800 Ω cm (undoped) to 2 × 107 Ω cm (1% Mn-doped). The XPS spectra of Mn-doped ZnO films were analysed. © 2006 Elsevier B.V. All rights reserved;
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页码：44 / 47
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