Current-induced spin polarization and spin Hall effect in III-V compounds two-dimensional materials

被引:1
|
作者
Sun, Shuhan [1 ,2 ]
Ren, Yi [1 ,3 ,4 ]
Zhang, Dong [1 ,2 ]
Lou, Wen-Kai [1 ,2 ]
Chang, Kai [1 ,5 ]
机构
[1] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Hunan Normal Univ, Key Lab Low Dimens Quantum Struct & Quantum Contro, Minist Educ, Dept Phys, Changsha 410081, Peoples R China
[4] Hunan Normal Univ, Synerget Innovat Ctr Quantum Effects & Applicat, Changsha 410081, Peoples R China
[5] Zhejiang Univ, Ctr Quantum Matter, Sch Phys, Hangzhou 310027, Peoples R China
关键词
ELECTRONIC-PROPERTIES; CONDUCTION; MOS2;
D O I
10.1103/PhysRevB.110.165430
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We construct a multiband k <middle dot> p Hamiltonian in monolayer and bilayer double-layer honeycomb III-V compounds including spin-orbit coupling (SOC) based on the invariant theory. The Hamiltonian can describe electronic structures near the P point of the Brillouin zone and anisotropic spin splitting, which is in good agreement with first-principles calculations. These SOC effects contribute to the existence of current-induced spin polarization (CISP) and spin Hall effect (SHE). The interplay between Zeeman and Rashba SOC leads to Lifshitz transitions for CISP and SHE at the maximum of lower-valence bands. Our work offers a possible approach for constructing 2D III-V compounds spintronic devices.
引用
收藏
页数:12
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