The new power brokers: High voltage RF devices

被引：0

作者：

Pengelly, Ray ^{[1
]}

Vye, David ^{[1
]}

Pelletier, Leonard ^{[1
]}

Theeuwen, Steven ^{[1
]}

Aichele, Dave ^{[1
]}

Crampton, Ray ^{[1
]}

Battaglia, Brian ^{[1
]}

机构：

[1] Cree Inc., United States

来源：

Microwave Journal | 2009年 / 52卷 / 06期

关键词：

Significant developments in the field RF and microwave semiconductors have led to the introduction of devices with material properties that can sustain high electric breakdown. The main markets for such high-power and high-frequency devices are wireless infrastructure; defense and military applications; and broadcast and communication satellites. ABI Research has conducted a study that reveals that the demand for the pulsed RF power devices is expected to record significant growth between 2009-2014. The demand for these devices is expected to grow significantly due to worldwide upgrade of air traffic control systems; including new avionics; transponders; and air navigation systems. Many semiconductor manufacturers are making efforts to enter the avionics; L-band; S-band; and sub-1 GHz radar markets to meet the requirements of emerging application of high-voltage devices;

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学科分类号：

摘要：

Journal article (JA)

引用

页码：22 / 40

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