Silicon light emitting devices in CMOS technology

被引：5
|
作者：
State Key Lab. on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [1 ]
机构：
来源：
Chin. Phys. Lett. | 2007年 / 1卷 / 265-267期
关键词：
Current density - Light emission - Nitrogen compounds - MOS devices - Silicon - Metals - Oxide semiconductors;
D O I：
10.1088/0256-307X/24/1/072
中图分类号：
学科分类号：
摘要：
Two silicon light emitting devices with different structures are realized in standard 0.35μm complementary metal-oxide-semiconductor (CMOS) technology. They operate in reverse breakdown mode and can be turned on at 8.3V. Output optical powers of 13.6nW and 12.1nW are measured at 10V and 100mA, respectively, and both the calculated light emission intensities are more than 1mW/cm 2. The optical spectra of the two devices are between 600-790nm with a clear peak near 760nm. ©2007 Chinese Physical Soceity and IOP Publishing Ltd.
引用
收藏
相关论文
共 50 条
  • [21] Erbium doped silicon for light emitting devices
    Michel, J
    Zheng, B
    Palm, J
    Ouellette, E
    Gan, F
    Kimerling, LC
    RARE EARTH DOPED SEMICONDUCTORS II, 1996, 422 : 317 - 324
  • [22] Silicon-based light emitting devices
    Lourenço, MA
    Milosavljevic, M
    Galata, S
    Siddiqui, MSA
    Shao, G
    Gwilliam, RM
    Homewood, KP
    VACUUM, 2005, 78 (2-4) : 551 - 556
  • [23] Increased efficiency of silicon CMOS light emitting diodes
    Snyman, LW
    Aharoni, H
    duPlessis, M
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 562 - 565
  • [24] Increased Efficiency of Silicon Light-Emitting Device in Standard Si-CMOS Technology
    Xu, Kaikai
    Yu, Qi
    Li, Guannpyng
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2015, 51 (08)
  • [25] On the Design and Optimization of Three-Terminal Light-Emitting Device in Silicon CMOS Technology
    Xu, Kaikai
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (04)
  • [26] Light emitting polymer on CMOS: a new photonic technology?
    Underwood, I
    Gourlay, J
    WAVE OPTICS AND PHOTONIC DEVICES FOR OPTICAL INFORMATION PROCESSING II, 2003, 5181 : 110 - 119
  • [27] Low-voltage CMOS/BiCMOS light emitting devices
    du Plessis, M
    Aharoni, H
    Snyman, LW
    Commad 04: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, 2005, : 393 - 396
  • [28] Organic light-emitting devices with silicon anodes
    Huang, CJ
    Han, S
    Grozea, D
    Turak, A
    Lu, ZH
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (08)
  • [29] Dislocation-based silicon light emitting devices
    Lourenço, MA
    Siddiqui, MSA
    Shao, G
    Gwilliam, RM
    Homewood, KP
    TOWARDS THE FIRST SILICON LASER, 2003, 93 : 11 - 20
  • [30] Erbium-doped silicon light emitting devices
    Chen, TD
    Agarwal, AM
    Giovane, LM
    Foresi, JS
    Liao, L
    Lim, DR
    Morse, MT
    Ouellette, EJ
    Ahn, SH
    Duan, XM
    Michel, J
    Kimerling, LC
    LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS II, 1998, 3279 : 136 - 145
12345