Silicon nanowire radial p-n junction solar cells

被引：0
|
作者：
Garnett, Erik C.
Yang, Peidong
机构：
来源：
Journal of the American Chemical Society | 2008年 / 130卷 / 29期
关键词：
We have demonstrated a low-temperature wafer-scale etching and thin film deposition method for fabricating silicon n-p core-shell nanowire solar cells. Our devices showed efficiencies up to nearly 0.5%; limited primarily by interfacial recombination and high series resistance. Surface passivation and contact optimization will be critical to improve device performance in the future. Copyright © 2008 American Chemical Society;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：9224 / 9225
相关论文
共 50 条
  • [31] Static and Dynamic Characterization of P-N Junction Solar Cells
    Alamoud, A.R.M.
    Al-Mashary, B.A.
    Ragaie, H.F.
    Journal of King Saud University - Engineering Sciences, 1998, 10 (02): : 183 - 199
  • [32] Comparative experimental and simulative investigations of radial p-n junction Si microwire array solar cells
    Lee, Eunsongyi
    Kim, Yoonjung
    Gwon, Minji
    Kim, Dong-Wook
    Baek, Seong-Ho
    Kim, Jae Hyun
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 103 : 93 - 97
  • [33] Fabrication of large-area silicon nanowire p-n junction diode arrays
    Peng, KQ
    Huang, ZP
    Zhu, J
    ADVANCED MATERIALS, 2004, 16 (01) : 73 - +
  • [34] Silicon Solar Cells with Vertical p-n Junctions for Hybrid Solar Cells
    Malyutina-Bronskaya, Viktoria V.
    Zalesskii, Valeryi B.
    Konoiko, Aleksey I.
    Malyshev, Victor S.
    2015 16TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES, 2015, : 87 - 89
  • [35] Realization of a linear germanium nanowire p-n junction
    Tutuc, Emanuel
    Appenzeller, Joerg
    Reuter, Mark C.
    Guha, Supratik
    NANO LETTERS, 2006, 6 (09) : 2070 - 2074
  • [36] High performance radial p-n junction solar cell based on silicon nanopillar array with enhanced decoupling mechanism
    Dou, Bingfei
    Jia, Rui
    Li, Haofeng
    Chen, Chen
    Ding, Wuchang
    Meng, Yanlong
    Xing, Zhao
    Liu, Xinyu
    Ye, Tianchun
    APPLIED PHYSICS LETTERS, 2012, 101 (18)
  • [37] Influence of technological conditions of p-n junction formation on forming the radiation defects in silicon solar cells
    Makhkamov, Sh.
    Muminov, R.A.
    Tursunov, N.A.
    Ashurov, M.
    Dzhuliev, Kh.Kh.
    Geliotekhnika, 2000, (02): : 8 - 14
  • [38] Comparison of p-n junction and inversion-layer silicon solar cells by means of experiment and simulation
    Inst fuer Solarenergieforschung, Hameln-Emmerthal, Emmerthal, Germany
    Progress in Photovoltaics: Research and Applications, 1996, 4 (03): : 193 - 204
  • [39] CURRENT AMPLIFICATION BY SILICON P-N JUNCTION
    KANAI, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1951, 6 (03) : 211 - 212
  • [40] Silicon photodiode with a grid p-n junction
    V. I. Blynskii
    Yu. G. Vasileuskii
    S. A. Malyshev
    A. L. Chizh
    Semiconductors, 2007, 41 : 223 - 226
12345