Si/Ge hole-tunneling double-barrier resonant tunneling diodes formed on sputtered flat Ge layers

被引：0

作者：

Hanafusa, Hiroaki ^{[1
]}

Hirose, Nobumitsu ^{[2
]}

Kasamatsu, Akifumi ^{[2
]}

Mimura, Takashi ^{[2
]}

Matsui, Toshiaki ^{[2
]}

Chong, Harold M. H. ^{[3
]}

Mizuta, Hiroshi ^{[3
]}

Suda, Yoshiyuki ^{[1
]}

机构：

[1] Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

[2] National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan

[3] School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, United Kingdom

来源：

Applied Physics Express | 2011年 / 4卷 / 02期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Resonant tunneling diodes

引用

共 50 条

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