Investigation of strained InGaAs layers on GaAs substrate

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作者：
Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland [1 ]
不详 [2 ]
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来源：
Opt Appl | 2007年 / 3卷 / 237-242期
关键词：
Dislocations (crystals) - Semiconducting indium - Gallium arsenide - III-V semiconductors - Metallorganic vapor phase epitaxy - Semiconducting indium gallium arsenide - X ray diffraction analysis - Substrates - Heterojunctions - Semiconducting gallium - Semiconductor alloys - Synchrotron radiation;
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摘要：
A set of In0.13Ga0.87As layers of various thicknesses on GaAs substrate has been grown by low pressure metalorganic vapour phase epitaxy (LP MOVPE). The initial stage of relaxation process has been investigated and critical layer thickness (CLT) has been determined. The investigations were performed by applying atomic force microscopy (AFM), high resolution X-ray diffractometry (HR XRD) with conventional and synchrotron radiation. The value of CLT determined by AFM observations agrees with that obtained from diffuse scattering measurements. The value is in agreement with HR XRD results.
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