Investigation of strained InGaAs layers on GaAs substrate

被引：0
|
作者：
Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland [1 ]
不详 [2 ]
机构：
来源：
Opt Appl | 2007年 / 3卷 / 237-242期
关键词：
Dislocations (crystals) - Semiconducting indium - Gallium arsenide - III-V semiconductors - Metallorganic vapor phase epitaxy - Semiconducting indium gallium arsenide - X ray diffraction analysis - Substrates - Heterojunctions - Semiconducting gallium - Semiconductor alloys - Synchrotron radiation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A set of In0.13Ga0.87As layers of various thicknesses on GaAs substrate has been grown by low pressure metalorganic vapour phase epitaxy (LP MOVPE). The initial stage of relaxation process has been investigated and critical layer thickness (CLT) has been determined. The investigations were performed by applying atomic force microscopy (AFM), high resolution X-ray diffractometry (HR XRD) with conventional and synchrotron radiation. The value of CLT determined by AFM observations agrees with that obtained from diffuse scattering measurements. The value is in agreement with HR XRD results.
引用
收藏
相关论文
共 50 条
  • [1] Investigation of strained InGaAs layers on GaAs substrate
    Jasik, Agata
    Sass, Jerzy
    Mazur, Krystyna
    Wesolowsk, Marek
    OPTICA APPLICATA, 2007, 37 (03) : 237 - 242
  • [2] RHEED oscillation studies of pseudomorphic InGaAs strained layers on GaAs substrate
    Leem, JY
    Lee, CR
    Noh, SK
    Son, JS
    JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) : 84 - 88
  • [3] Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate
    Patriarche, G
    Largeau, L
    Harmand, JC
    Gollub, D
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180): : 217 - 220
  • [4] Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate
    Patriarche, G
    Largeau, L
    Harmand, JC
    Gollub, D
    APPLIED PHYSICS LETTERS, 2004, 84 (02) : 203 - 205
  • [5] ON THE ORIGIN OF MISFIT DISLOCATIONS IN INGAAS/GAAS STRAINED LAYERS
    DIXON, RH
    GOODHEW, PJ
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) : 3163 - 3168
  • [6] DISLOCATION DIPOLES IN STRAINED INGAAS LAYERS GROWN ON GAAS
    KIGHTLEY, P
    ARAGONHERRANZ, G
    GOODHEW, PJ
    POND, RC
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 603 - 606
  • [7] GROWTH-CONDITIONS AND CHARACTERIZATION OF INGAAS GAAS STRAINED LAYERS SUPERLATTICES
    QUILLEC, M
    GOLDSTEIN, L
    LEROUX, G
    BURGEAT, J
    PRIMOT, J
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2904 - 2909
  • [8] RELAXATION OF STRAINED INGAAS/GAAS LAYERS UNDER THERMAL-PROCESSING
    LOURENCO, MA
    HOMEWOOD, KP
    CONSIDINE, L
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 507 - 509
  • [9] Photoelectron diffraction investigation of strained InGaAs grown on (001) GaAs
    Proietti, MG
    Turchini, S
    Garcia, J
    Asensio, MC
    Casado, C
    Martelli, F
    Prosperi, T
    JOURNAL DE PHYSIQUE IV, 1997, 7 (C2): : 575 - 576
  • [10] PHOTOLUMINESCENCE IN STRAINED INGAAS/GAAS SUPERLATTICES
    DAHL, DA
    DRIES, LJ
    JUNGA, FA
    OPYD, WG
    CHU, P
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 2079 - 2082
12345