Origin of p-type conductivity in a WSe2 monolayer

被引：0
|
作者：
Zhang, Yu-Zhou [1 ,2 ]
Zhu, Guo-Jun [1 ,2 ]
Yang, Ji-Hui [1 ,2 ]
机构：
[1] Department of Physics, Key Laboratory for Computational Science (MOE), State Key Laboratory of Surface Physics, Fudan University, Shanghai,200432, China
[2] Shanghai Qizhi Institution, Shanghai,200232, China
来源：
Nanoscale | 2023年 / 15卷 / 28期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Point defects - Selenium compounds - Transition metals
引用
收藏
页码：12116 / 12122
相关论文
共 50 条
  • [31] Origin of ultrafast growth of monolayer WSe2 via chemical vapor deposition
    Shuai Chen
    Junfeng Gao
    Bharathi M. Srinivasan
    Gang Zhang
    Viacheslav Sorkin
    Ramanarayan Hariharaputran
    Yong-Wei Zhang
    npj Computational Materials, 5
  • [32] Ultrafast dynamics of spin relaxation in monolayer WSe2 and the WSe2/graphene heterojunction
    Chen, Xin
    Zheng, Shu-Wen
    Wang, Xue-Peng
    Wang, Hai-Yu
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 24 (27) : 16538 - 16544
  • [33] Origin of ultrafast growth of monolayer WSe2 via chemical vapor deposition
    Chen, Shuai
    Gao, Junfeng
    Srinivasan, Bharathi M.
    Zhang, Gang
    Sorkin, Viacheslav
    Hariharaputran, Ramanarayan
    Zhang, Yong-Wei
    NPJ COMPUTATIONAL MATERIALS, 2019, 5 (1)
  • [34] Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling
    Naim Hossain Patoary
    Jing Xie
    Guantong Zhou
    Fahad Al Mamun
    Mohammed Sayyad
    Sefaattin Tongay
    Ivan Sanchez Esqueda
    Scientific Reports, 13
  • [35] Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling
    Patoary, Naim Hossain
    Xie, Jing
    Zhou, Guantong
    Al Mamun, Fahad
    Sayyad, Mohammed
    Tongay, Sefaattin
    Esqueda, Ivan Sanchez
    SCIENTIFIC REPORTS, 2023, 13 (01)
  • [36] Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering
    Rai, Amritesh
    Park, Jun Hong
    Zhang, Chenxi
    Kwak, Iljo
    Wolf, Steven
    Vishwanath, Suresh
    Lin, Xinyu
    Furdyna, Jacek
    Xing, Huili Grace
    Cho, Kyeongjae
    Kummel, Andrew C.
    Banerjee, Sanjay K.
    2018 76TH DEVICE RESEARCH CONFERENCE (DRC), 2018,
  • [37] Hydrogen Evolution from Pt/Ru-Coated p-Type WSe2 Photocathodes
    McKone, James R.
    Pieterick, Adam P.
    Gray, Harry B.
    Lewis, Nathan S.
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2013, 135 (01) : 223 - 231
  • [38] High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact
    Le, Xuan Phu
    Venkatesan, Annadurai
    Daw, Debottam
    Nguyen, Tien Anh
    Baithi, Mallesh
    Bouzid, Houcine
    Nguyen, Tuan Dung
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (39) : 52645 - 52652
  • [39] On the origin of p-type conductivity in amorphous chalcogenides
    Kolobov, AV
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 : 728 - 731
  • [40] Nonclassical Exciton Diffusion in Monolayer WSe2
    Wagner, Koloman
    Zipfel, Jonas
    Rosati, Roberto
    Wietek, Edith
    Ziegler, Jonas D.
    Brem, Samuel
    Perea-Causin, Raul
    Taniguchi, Takashi
    Watanabe, Kenji
    Glazov, Mikhail M.
    Malic, Ermin
    Chernikov, Alexey
    PHYSICAL REVIEW LETTERS, 2021, 127 (07)
12345