Modeling of processes of gettering the generation-recombination centers in silicon at diffusion of phosphorus and boron

被引：0
|
作者：
National University of Science and Technology MISiS, 4 Leninsky av., Moscow [1 ]
119049, Russia
不详 [2 ]
111538, Russia
不详 [3 ]
119454, Russia
机构：
来源：
Appl. Phys. | / 5卷 / 15-20期
关键词：
Phosphorus - Borosilicate glass - Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The model is applied to a several case, where phosphorus or boron layers gettering is performed Agreement with experimental results is established if the P+-Fe2- ion paires are formed during phosphorus gettering. A borosilicate glass layer is the gettering site during boron gettering. The model predicts the effectivity for gettering according to the process parameters.
引用
收藏
相关论文
共 50 条
  • [31] Black silicon significantly enhances phosphorus diffusion gettering
    Toni P. Pasanen
    Hannu S. Laine
    Ville Vähänissi
    Jonas Schön
    Hele Savin
    Scientific Reports, 8
  • [32] Black silicon significantly enhances phosphorus diffusion gettering
    Pasanen, Toni P.
    Laine, Hannu S.
    Vahanissi, Ville
    Schoen, Jonas
    Savin, Hele
    SCIENTIFIC REPORTS, 2018, 8
  • [33] EFFECT OF THERMAL NITRIDATION PROCESSES ON BORON AND PHOSPHORUS DIFFUSION IN (100) SILICON
    FAHEY, P
    DUTTON, RW
    MOSLEHI, M
    APPLIED PHYSICS LETTERS, 1983, 43 (07) : 683 - 685
  • [34] THERMAL GENERATION OF RECOMBINATION CENTERS IN SILICON
    ROSS, B
    MADIGAN, JR
    PHYSICAL REVIEW, 1957, 108 (06): : 1428 - 1433
  • [35] EFFECT OF DIFFUSION AND DRIFT ON GENERATION-RECOMBINATION NOISE IN HGCDTE PHOTOCONDUCTORS
    SMITH, DL
    LO, SK
    GENOVA, JD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 259 - 262
  • [36] Generation-recombination noise sources in silicon-on-insulator MOSFETs
    Simoen, E
    Claeys, C
    PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1996, 96 (03): : 255 - 262
  • [37] Combining Low-Temperature Gettering With Phosphorus Diffusion Gettering for Improved Multicrystalline Silicon
    Al-Amin, Mohammad
    Murphy, John D.
    IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 7 (06): : 1519 - 1527
  • [38] ANOMALOUS DIFFUSION OF BORON AND PHOSPHORUS IN SILICON
    SHAW, D
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 11 (01): : K27 - &
  • [39] Effect of bulk carrier generation-recombination centers upon the I-V characteristic of silicon pn junctions
    Obreja, VVN
    Dinoiu, G
    Lakatos, E
    CAS'98 PROCEEDINGS - 1998 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, 1998, : 293 - 296
  • [40] RELATIONSHIP BETWEEN GENERATION-RECOMBINATION PROCESSES AND EFFICIENCY OF GUNN DIODES
    LISENKER, BS
    MARONCHUK, YE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 336 - 337
12345