Doping effects on thermoelectric properties of the off-stoichiometric Heusler compounds Fe2-xV1+xAl

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[1] Nishino, Y.
[2] Tamada, Y.
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| 1600年 / American Institute of Physics Inc.卷 / 115期
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The thermoelectric properties of Heusler-type Fe2-xV1+xAl1-ySiy and Fe2-xV1+x-yTiyAl alloys have been investigated to clarify which off-stoichiometric alloy; i.e; V-rich (x>0) or V-poor (x1.95V1.05Al 0.97Si0.03 and p-type Fe2.04V 0.93Ti0.03Al; respectively. When the Seebeck coefficient is plotted as a function of valence electron concentration (VEC); the VEC dependence for the doped off-stoichiometric alloys falls on characteristic curves depending on the off-stoichiometric composition x. It is concluded that a larger Seebeck coefficient with a negative sign can be obtained for the V-rich alloys rather than the V-poor alloys; whilst good p-type materials are always derived from the V-poor alloys. Substantial enhancements in the Seebeck coefficient for the off-stoichiometric alloys could be achieved by a favorable modification in the electronic structure around the Fermi level through the antisite V or Fe defect formation. © 2014 AIP Publishing LLC;
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