Study of carrier transport by pentacene thin-film transistors at high temperatures

被引：0
|
作者：
Lo, Po-Yuan [1 ]
Pei, Zing-Way [1 ]
Hwang, Jiunn-Jye [1 ]
Tseng, Huai-Yuan [1 ]
Chan, Yi-Jen [2 ]
机构：
[1] Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan
[2] Department of Electrical Engineering, Nation Central University, Chungli, 32054, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期
关键词：
In this study; the interface properties of pentacene organic thin-film transistors (OTFTs) were analyzed at elevated temperatures. The pentacene layers were deposited on the poly(α-methyl styrene) (PMS)-treated SiO 2 dielectric layers. The threshold voltages (Vt) were varied drastically in the temperature range from 100 to 200°C due to the phase transition of the PMS layer after the Tg point (T gpMs = 76 °C). After high temperature electric measurements; the deformation of pentacene was observed using atomic force microscopy and the oxidation of pentacene was also observed in the fourier transform infrared spectroscopy (FTIR) (about 80 °C) by the appearance of C=0 bonds. The drastic decrease in mobility of pentacene OTFTs about 100 °C was attributed to the distortion of the pentacene conjugate structure. © 2006 The Japan Society of Applied Physics;
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页码：3704 / 3707
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