Effects of annealing on carrier lifetime in 4H-SiC

被引：0

作者：

Jenny, J.R. ^{[1
]}

Malta, D.P. ^{[1
]}

Tsvetkov, V.F. ^{[1
]}

Das, M.K. ^{[1
]}

Hobgood, H.Mcd. ^{[1
]}

Carter Jr., C.H. ^{[1
]}

Kumar, R.J. ^{[2
]}

Borrego, J.M. ^{[2
]}

Gutmann, R.J. ^{[2
]}

Aavikko, R. ^{[3
]}

机构：

[1] Cree Inc., 4600 Silicon Drive, Durham, NC 27703 27703, United States

[2] Rensselaer Polytechnic Institute, Troy, NY 12180

[3] Helsinki University of Technology, FIN-02015 HUT, Finland

来源：

Journal of Applied Physics | 2006年 / 100卷 / 11期

关键词：

22;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

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