Modulated reflectance study of InAs quantum dot stacks embedded in GaAs/AlAs superlattice

被引:0
|
作者
Nedzinskas, R. [1 ]
Cechavicius, B. [1 ]
Kavaliauskas, J. [1 ]
Karpus, V. [1 ]
Seliuta, D. [1 ]
Tamošinas, V. [1 ]
Valušis, G. [1 ,2 ]
Fasching, G. [3 ]
Unterrainer, K. [3 ]
Strasser, G. [4 ]
机构
[1] Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
[2] Institute of Applied Research, Vilnius University, Saultekio Ave. 9, LT-10222 Vilnius, Lithuania
[3] Institut für Photonik, Technische Universität-Wien, A-1040 Vienna, Austria
[4] University at Buffalo, State University of New York, Buffalo, NY 14260-1500, United States
来源
Journal of Applied Physics | 2009年 / 106卷 / 06期
关键词
III-V semiconductors;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Photoluminescence of a single InAs/AlAs quantum dot
    Shamirzaev, T. S.
    Zhuravlev, K. S.
    Larsson, M.
    Holtz, P. O.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 7, 2008, 5 (07): : 2528 - +
  • [22] Sharp photoluminescence lines of InAs quantum dot embedded in GaAs MESA
    Sugisaki, M
    Ren, HW
    Sugou, S
    Nishi, K
    Masumoto, Y
    SOLID-STATE ELECTRONICS, 1998, 42 (7-8) : 1325 - 1330
  • [23] Electron escape from self-assembled InAs/GaAs quantum dot stacks
    Brounkov, PN
    Suvorova, AA
    Maximov, MV
    Tsatsul'nikov, AF
    Zhukov, AE
    Egorov, AY
    Kovsh, AR
    Konnikov, SG
    Ihn, T
    Stoddart, ST
    Eaves, L
    Main, PC
    PHYSICA B-CONDENSED MATTER, 1998, 249 : 267 - 270
  • [24] Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate
    Salman, S.
    Folliot, H.
    Le Pouliquen, J.
    Chevalier, N.
    Rohel, T.
    Paranthoen, C.
    Bertru, N.
    Labbe, C.
    Letoublon, A.
    Le Corre, A.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2012, 177 (11): : 882 - 886
  • [25] Computational Study of InAs/GaAs Quantum Dot Arrays
    Gomez-Campos, F. M.
    Rodriguez-Bolivar, S.
    Luque-Rodriguez, A.
    Lopez-Villanueva, J. A.
    Carceller, J. E.
    2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010), 2010, : 223 - 226
  • [26] Study of annealed InAs/GaAs quantum dot structures
    Qiu, Y.
    Zhang, Z. Y.
    Hogg, R. A.
    Cullis, A. G.
    Walther, T.
    16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 2010, 209
  • [27] Ultrafast Photocarrier Transport Dynamics in InAs/GaAs Quantum Dot Superlattice Solar Cell
    Tanibuchi, Taizo
    Kada, Tomoyuki
    Kasamatsu, Naofumi
    Matsumura, Takuya
    Asahi, Shigeo
    Kita, Takashi
    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
  • [28] Hot-Carrier Extraction in InAs/GaAs Quantum Dot Superlattice Solar Cells
    Harada, Yukihiro
    Iwata, Naoto
    Watanabe, Daiki
    Asahi, Shigeo
    Kita, Takashi
    2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2019, : 3004 - 3006
  • [29] Electric field effects on excitonic quantum beats in a single quantum well embedded in a GaAs/AlAs superlattice
    Hasegawa, Takayuki
    Takagi, Yoshihiro
    Nakayama, Masaaki
    PHYSICAL REVIEW B, 2011, 83 (20):
  • [30] Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness
    Kashtiban, R. J.
    Bangert, U.
    Missous, M.
    MICROELECTRONICS JOURNAL, 2009, 40 (03) : 479 - 482