Small-signal and noise model of fully depleted silicon-on-insulator metal-oxide-semiconductor devices for low-noise amplifier

被引：0

作者：

Kim, Guechol ^{[1
]}

Murakami, Bunsei ^{[1
]}

Goto, Masaru ^{[1
]}

Kihara, Takao ^{[1
]}

Nakamura, Keiji ^{[1
]}

Shimizu, Yoshiyuki ^{[1
]}

Matsuoka, Toshimasa ^{[1
]}

Taniguchi, Kenji ^{[1
]}

机构：

[1] Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 9 A期

关键词：

An RF small-signal and noise model of fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented. The model together with its intrinsic model parameters extracted from de-embedding extrinsic parameters reproduces the frequency and noise response of FD-SOI MOSFETs. We have applied the proposed model to a low-noise amplifier (LNA) operating at 5.5 GHz; which is implemented in a 0.15 μm FD-SOI complementary metal-oxide-semiconductor (CMOS) technology. The simulated small-signal and noise performance of the LNA are in good agreement with the measured data of the fabricated LNA. © 2006 The Japan Society of Applied Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：6872 / 6877

共 50 条

[31] Random telegraph signals in silicon-on-insulator metal-oxide-semiconductor transistors
1600, American Inst of Physics, Woodbury, NY, USA (75):
[32] Low-frequency noise in silicon-on-insulator devices and technologies
Simoen, E.
Mercha, A.
Claey, C.
Lukyanchikova, N.
SOLID-STATE ELECTRONICS, 2007, 51 (01) : 16 - 37
[33] Small-signal and noise GaAs pHEMT modeling for low noise amplifier design
Popov, A. A.
Bilevich, D., V
Metel, A. A.
Salnikov, A. S.
Dobush, I. M.
Goryainov, A. E.
Kalentyev, A. A.
INTERNATIONAL CONFERENCE ACTUAL TRENDS IN RADIOPHYSICS, 2020, 1499
[34] Low-frequency noise in silicon-on-insulator devices and technologies
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
不详
不详
Solid-State Electron., 2007, 1 (16-37):
[35] Complete surface-potential-based fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model for circuit simulation
Kitamaru, D., 1600, Japan Society of Applied Physics (43):
[36] Complete surface-potential-based fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model for circuit simulation
Kitamaru, D
Uetsuji, Y
Sadachika, N
Miura-Mattausch, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 2166 - 2169
[37] Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
Gilbert, MJ
Ferry, DK
JOURNAL OF APPLIED PHYSICS, 2004, 95 (12) : 7954 - 7960
[38] DETERMINATION OF FLAT-BAND VOLTAGES FOR FULLY DEPLETED SILICON-ON-INSULATOR (SOI) METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS)
LYU, JS
NAM, KS
LEE, CC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9A): : 2678 - 2681
[39] Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
Gilbert, M.J.
Ferry, D.K.
Journal of Applied Physics, 2004, 95 (12): : 7954 - 7960
[40] A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications
Rengel, R
Pardo, D
Martín, MJ
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (05) : 634 - 643

← 1 2 3 4 5 →