Small-signal and noise model of fully depleted silicon-on-insulator metal-oxide-semiconductor devices for low-noise amplifier

被引：0

作者：

Kim, Guechol ^{[1
]}

Murakami, Bunsei ^{[1
]}

Goto, Masaru ^{[1
]}

Kihara, Takao ^{[1
]}

Nakamura, Keiji ^{[1
]}

Shimizu, Yoshiyuki ^{[1
]}

Matsuoka, Toshimasa ^{[1
]}

Taniguchi, Kenji ^{[1
]}

机构：

[1] Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 9 A期

关键词：

An RF small-signal and noise model of fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented. The model together with its intrinsic model parameters extracted from de-embedding extrinsic parameters reproduces the frequency and noise response of FD-SOI MOSFETs. We have applied the proposed model to a low-noise amplifier (LNA) operating at 5.5 GHz; which is implemented in a 0.15 μm FD-SOI complementary metal-oxide-semiconductor (CMOS) technology. The simulated small-signal and noise performance of the LNA are in good agreement with the measured data of the fabricated LNA. © 2006 The Japan Society of Applied Physics;

D O I：

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中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：6872 / 6877

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