Linear growth kinetics of nanometric silicides in Co/amorphous-Si and Co/CoSi/amorphous-Si thin films

被引:0
|
作者
Cserháti, C. [1 ]
Balogh, Z. [1 ]
Csik, A. [1 ]
Langer, G.A. [1 ]
Erdélyi, Z. [1 ]
Glodán, Gy. [1 ]
Katona, G.L. [1 ]
Beke, D.L. [1 ]
Zizak, I. [2 ]
Darowski, N. [2 ]
Dudzik, E. [2 ]
Feyerherm, R. [2 ]
机构
[1] Department of Solid State Physics, University of Debrecen, P. O. Box. 2, H-4010 Debrecen, Hungary
[2] Hahn-Meitner-Institut Berlin, Glienicker Straße 100, D-14109 Berlin, Germany
来源
Journal of Applied Physics | 2008年 / 104卷 / 02期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] MICROSCOPIC STUDY OF TUNNELING PROCESSES VIA LOCALIZED STATES IN AMORPHOUS-SI/SIOX TUNNEL BARRIERS
    NAITO, M
    BEASLEY, MR
    PHYSICAL REVIEW B, 1987, 35 (05): : 2548 - 2551
  • [42] Reproduction of columnar grains after laser crystallization from amorphous-Si to poly-Si using crystallization simulator
    Matsuki, Kuniaki
    Saito, Ryusuke
    Tsukamoto, Shuji
    Kimura, Mutsumi
    SOLID-STATE ELECTRONICS, 2012, 69 : 4 - 6
  • [43] Nanoscale physics and defect state chemistry at amorphous-Si/In0.53Ga0.47As interfaces
    Marchiori, C.
    El Kazzi, M.
    Czornomaz, L.
    Pierucci, D.
    Silly, M.
    Sirotti, F.
    Abel, S.
    Uccelli, E.
    Sousa, M.
    Fompeyrine, J.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (05)
  • [44] Fabrication of Flexible Amorphous-Si Thin-Film Solar Cells on a Parylene Template Using a Direct Separation Process
    Lo, Shih-Yung
    Wuu, Dong-Sing
    Chang, Chia-Hao
    Wang, Chao-Chun
    Lien, Shui-Yang
    Horng, Ray-Hua
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (05) : 1433 - 1439
  • [45] The Amorphous-Si CMP Process Improvement for L14 nm FinFET Technology Node
    Li, Y. T.
    Huang, P. C.
    Tsai, F. S.
    Li, K. R.
    Lin, C. H.
    Lin, Z. J.
    Liu, Y. L.
    Sie, W. S.
    Hsu, S. K.
    Lin, Y. M.
    Lin, W. C.
    Liu, C. C.
    Lin, J. F.
    Wu, J. Y.
    2014 INTERNATIONAL CONFERENCE ON PLANARIZATION/CMP TECHNOLOGY (ICPT), 2014, : 186 - 189
  • [46] SiC nanodot formation in amorphous-Si and poly-Si substrates using a hot-C+-ion implantation technique
    Mizuno, Tomohisa
    Kanazawa, Rikito
    Aoki, Takashi
    Sameshima, Toshiyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SB)
  • [47] Conversion Efficiency Enhancement of Amorphous-Si:H Solar Cell for Space Satellite Antenna Applications
    Malhotra, Shivani
    Gupta, Lipika
    Madan, Jaya
    Nandan, Hritik
    COMPUTER AIDED CONSTELLATION MANAGEMENT AND COMMUNICATION SATELLITES, ICSS 2022, 2023, 987 : 151 - 157
  • [48] THERMAL OXIDE, Al2O3 AND AMORPHOUS-SI PASSIVATION LAYERS ON SILICON
    Ho, W. S.
    Chen, Y. -Y.
    Cheng, T. -H.
    Chen, J. -Y.
    Lu, J. -A.
    Huang, P. -L.
    Liu, C. W.
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010,
  • [49] AMORPHOUS FE-CO-SI-B SPUTTERED THIN-FILMS
    OKADA, T
    MATSUSHITA, S
    SAKURAI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2305 - 2306
  • [50] Ultralow resistance W/poly-Si gate CMOS technology using amorphous-Si/TiN buffer layer
    Wakabayashi, H
    Yamamoto, T
    Yoshida, K
    Soda, E
    Tokunaga, KI
    Mogami, T
    Kunio, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (02) : 295 - 300