Linear growth kinetics of nanometric silicides in Co/amorphous-Si and Co/CoSi/amorphous-Si thin films

被引：0
|
作者：
Cserháti, C. [1 ]
Balogh, Z. [1 ]
Csik, A. [1 ]
Langer, G.A. [1 ]
Erdélyi, Z. [1 ]
Glodán, Gy. [1 ]
Katona, G.L. [1 ]
Beke, D.L. [1 ]
Zizak, I. [2 ]
Darowski, N. [2 ]
Dudzik, E. [2 ]
Feyerherm, R. [2 ]
机构：
[1] Department of Solid State Physics, University of Debrecen, P. O. Box. 2, H-4010 Debrecen, Hungary
[2] Hahn-Meitner-Institut Berlin, Glienicker Straße 100, D-14109 Berlin, Germany
来源：
Journal of Applied Physics | 2008年 / 104卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] Linear growth kinetics of nanometric silicides in Co/amorphous-Si and Co/CoSi/amorphous-Si thin films
    Cserhati, C.
    Balogh, Z.
    Csik, A.
    Langer, G. A.
    Erdelyi, Z.
    Glodan, G. Y.
    Katona, G. L.
    Beke, D. L.
    Zizak, I.
    Darowski, N.
    Dudzik, E.
    Feyerherm, R.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (02)
  • [2] INTERNAL PHOTOEMISSION IN HYDROGENATED AMORPHOUS-SI FILMS
    WRONSKI, CR
    ABELES, B
    CODY, GD
    TIEDJE, T
    APPLIED PHYSICS LETTERS, 1980, 37 (01) : 96 - 98
  • [3] GROWTH-KINETICS OF SI HEMISPHERICAL GRAINS ON CLEAN AMORPHOUS-SI SURFACES
    SAKAI, A
    TATSUMI, T
    ISHIDA, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (06): : 2950 - 2953
  • [4] Crystallization of amorphous-Si films by flash lamp annealing
    Pécz, B
    Dobos, L
    Panknin, D
    Skorupa, W
    Lioutas, C
    Vouroutzis, N
    APPLIED SURFACE SCIENCE, 2005, 242 (1-2) : 185 - 191
  • [5] Microstructure changes during annealing of Ag/amorphous-Si and Al/amorphous-Si bilayer films deposited on SiO2 substrate
    Doi, M
    JAPAN INSTITUTE OF METALS, PROCEEDINGS, VOL 12, (JIMIC-3), PTS 1 AND 2: SOLID - SOLID PHASE TRANSFORMATIONS, 1999, : 1329 - 1332
  • [6] Phase variation of amorphous-Si and poly-Si thin films with excimer laser irradiation
    Kitahara, K
    Suga, K
    Hara, A
    Nakajima, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (11B): : L1473 - L1475
  • [7] Formation of silicided shallow p+ n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation
    Juang, MH
    Hu, MC
    Yang, CJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02): : 392 - 396
  • [8] INTERFACIAL REACTIONS IN NI AMORPHOUS-SI MULTILAYERS
    WANG, WH
    BAI, HY
    WANG, WK
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1994, 179 (pt 1): : 229 - 233
  • [9] Prevention of thin film failures for PECVD amorphous-Si on plastic substrate
    Seo, Jong Hyun
    Jeon, Jae-Hong
    Choe, HeeHwan
    ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2, 2007, 124-126 : 387 - +
  • [10] PREVENTION OF CRYSTALLIZATION BY SURFACTANTS DURING SI MOLECULAR-BEAM DEPOSITION ON AMORPHOUS-SI FILMS
    SAKAI, A
    TATSUMI, T
    ISHIDA, K
    PHYSICAL REVIEW B, 1993, 47 (11): : 6803 - 6806
12345