Measurement of biaxial stress states in silicon using micro-raman spectroscopy

被引：0
|
作者：
Gustafson, Peter A. [1 ]
Harris, Stephen J. [2 ]
O'Neill, Ann E. [2 ]
Waas, Anthony M. [3 ,4 ]
机构：
[1] University of Michigan, Ann Arbor, MI 48109
[2] Physical and Environmental Science Department, Ford Research and Advanced Engineering Center, Dearborn, MI 48121
[3] ASME
[4] Department of of Aerospace Engineering, University of Michigan, Ann Arbor, MI 48109
来源：
Journal of Applied Mechanics, Transactions ASME | 2006年 / 73卷 / 05期
关键词：
Micro-Roman spectroscopy is used to determine the multiaxial stress state in silicon wafers using a strategy proposed by Narayanan; et al. (J. Appl. Phys. 82; 2595-2602; (1997)); Previously; this strategy was validated when silicon was subjected to uniaxial stress in the laboratory frame (Harris; et al. J. Appl. Phys. 96; 7195-7201 (2004)). In the present work; silicon wafers have been analyzed that were subjected to biaxial stress states in the laboratory frame. The predicted curves for the initially degenerate F2g peaks were found to fall within the variability of the measured curves. Stress ratios were found to be predictable. Stress magnitudes were also found to be predictable; but are subject to uncertainty greater than 25%. To perform these tests; an apparatus has been developed which can provide controlled ratios of biaxial stress in a simple and compact test geometry. This fixture was used under a microscope; enabling in situ measurement of biaxial stress states. Copyright © 2006 by ASME;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Conference article (CA)
引用
收藏
页码：745 / 751
相关论文
共 50 条
  • [41] Measurement of porous silicon thermal conductivity by micro-Raman scattering
    Périchon, S
    Lysenko, V
    Remaki, B
    Barbier, D
    Champagnon, B
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) : 4700 - 4702
  • [42] Micro-Raman spectroscopy of graphene
    Simpson, Jeff
    Walker, A. R. Hight
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2009, 238
  • [43] Micro-raman measurement of bending stresses in micromachined silicon flexures
    Srikar, VI
    Swan, AK
    Ünlü, MS
    Goldberg, BB
    Spearing, SM
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2003, 12 (06) : 779 - 787
  • [44] Micro-Raman spectroscopy in medicine
    Krafft, Christoph
    Popp, Juergen
    PHYSICAL SCIENCES REVIEWS, 2019, 4 (10)
  • [45] Micro-Raman spectroscopy of thaumasite
    Brough, AR
    Atkinson, A
    CEMENT AND CONCRETE RESEARCH, 2001, 31 (03) : 421 - 424
  • [46] MICRO-RAMAN SPECTROSCOPY OF CHROMOSOMES
    DEMUL, FFM
    VANWELIE, AGM
    OTTO, C
    MUD, J
    GREVE, J
    JOURNAL OF RAMAN SPECTROSCOPY, 1984, 15 (04) : 268 - 272
  • [47] Residual stress on surface and cross-section of porous silicon studied by micro-Raman spectroscopy
    Lei, ZK
    Kang, YL
    Cen, H
    Hu, M
    Qiu, Y
    CHINESE PHYSICS LETTERS, 2005, 22 (04) : 984 - 986
  • [48] Comparison of bacteria in different metabolic states by micro-Raman spectroscopy
    Shen, Haodong
    Roesch, Petra
    Thieme, Lara
    Pletz, Mathias W.
    Popp, Juergen
    JOURNAL OF MOLECULAR STRUCTURE, 2023, 1277
  • [49] Micro-Raman study of mechanical stress in polycrystalline silicon bridges
    Talaat, H
    Negm, S
    Schaffer, H
    Kaltsas, G
    Nassiopoulou, AG
    THIN-FILMS - STRESSES AND MECHANICAL PROPERTIES VII, 1998, 505 : 495 - 500
  • [50] Purity Evaluation of Highly Oriented Cubic Silicon Carbide Using Micro-Raman Spectroscopy
    Kim, Seul-Ki
    Jung, Eun Young
    Lee, Myung-Hyun
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2022, 23 (03) : 318 - 325
12345