Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes

被引：0
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作者：
Shei, Shih-Chang [1 ]
Sheu, Jinn-Kong [2 ]
Tsai, Chi-Ming [1 ,3 ]
Lai, Wei-Chi [2 ]
Lee, Ming-Lun [4 ]
Kuo, Cheng-Huang [5 ]
机构：
[1] Epitech Technology Cooperation, Hsin-Shi 744, Taiwan
[2] Advanced Optoelectronic Technology Center, Institute of Electro-Optical Science and Engineering, National Cheng-Kung University, Tainan 70101, Taiwan
[3] Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 70101, Taiwan
[4] Department of Electro-Optical Engineering, Southern Taiwan University of Technology, Tainan County 710, Taiwan
[5] Institute of Optical Science, National Central University, 320 Taiwan, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 A期
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Journal article (JA)
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页码：2463 / 2466
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