Analytical model for low-frequency noise in amorphous chalcogenide-based phase-change memory devices

被引：0
|
作者：
Betti Beneventi, G. [1 ,2 ]
Calderoni, A. [1 ]
Fantini, P. [1 ]
Larcher, L. [2 ]
Pavan, P. [2 ]
机构：
[1] Numonyx, Technology Development, via C. Olivetti 2, Agrate Brianza, Milan 20041, Italy
[2] Dip. Scienze e Metodi dell'Ingegneria, Universit Degli Studi di Modena e Reggio Emilia, via G. Amendola 2-pad, Morselli, Reggio Emilia 42100, Italy
来源：
Journal of Applied Physics | 2009年 / 106卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Analytic Model for Low-Frequency Noise in Nanorod Devices
    Lee, Jungil
    Yu, Byung Yong
    Han, Ilki
    Choi, Kyoung Jin
    Ghibaudo, Gerard
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (10) : 5257 - 5260
  • [22] Analytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors
    Trevisoli, Renan
    Pavanello, Marcelo Antonio
    Capovilla, Carlos Eduardo
    Barraud, Sylvain
    Doria, Rodrigo Trevisoli
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (06) : 2536 - 2543
  • [23] A Finite-Element Thermoelectric model for Phase-Change Memory devices
    Athmanathan, Aravinthan
    Krebs, Daniel
    Sebastian, Abu
    Le Gallo, Manuel
    Pozidis, Haralampos
    Eleftheriou, Evangelos
    2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2015, : 289 - 292
  • [24] Novel analytical and numerical approach to modeling low-frequency noise in semiconductor devices
    da Silva, R
    Wirth, GI
    Brederlow, R
    PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 2006, 362 (02) : 277 - 288
  • [25] Research of low-frequency model of a low noise microwave frequency (phase) detector
    Son R.B.
    Solodkov O.V.
    Radioelectronics and Communications Systems, 2009, 52 (8) : 424 - 430
  • [26] LOW-FREQUENCY NOISE ANALYSIS OF GAN-BASED DEVICES
    Pavelka, Jan
    Tanuma, Nobuhisa
    Tacano, Munecazu
    Sikula, Josef
    ELECTRONIC DEVICES AND SYSTEMS: IMAPS CS INTERNATIONAL CONFERENCE 2011, 2011, : 235 - 239
  • [27] ANALYTICAL MODEL OF LOW-FREQUENCY DIFFUSION NOISE IN GAAS-MESFETS
    LI, ZM
    MCALISTER, SP
    DAY, DJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) : 232 - 236
  • [28] Phase-change memory devices based on gallium-doped indium oxide
    Wang, S. -L.
    Chen, C. -Y.
    Hsieh, M. -K.
    Lee, W. -C.
    Kung, A. H.
    Peng, L. -H.
    APPLIED PHYSICS LETTERS, 2009, 94 (11)
  • [29] Understanding Amorphous States of Phase-Change Memory Using Frenkel-Poole Model
    Shih, Y. H.
    Lee, M. H.
    Breitwisch, M.
    Cheek, R.
    Wu, J. Y.
    Rajendran, B.
    Zhu, Y.
    Lai, E. K.
    Chen, C. F.
    Cheng, H. Y.
    Schrott, A.
    Joseph, E.
    Dasaka, R.
    Raoux, S.
    Lung, H. L.
    Lam, C.
    2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, 2009, : 705 - +
  • [30] Evaluation of Low-Frequency Noise in MOSFETs Used as a Key Component in Semiconductor Memory Devices
    Teramoto, Akinobu
    ELECTRONICS, 2021, 10 (15)
12345