Analytical model for low-frequency noise in amorphous chalcogenide-based phase-change memory devices

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作者：
Betti Beneventi, G. [1 ,2 ]
Calderoni, A. [1 ]
Fantini, P. [1 ]
Larcher, L. [2 ]
Pavan, P. [2 ]
机构：
[1] Numonyx, Technology Development, via C. Olivetti 2, Agrate Brianza, Milan 20041, Italy
[2] Dip. Scienze e Metodi dell'Ingegneria, Universit Degli Studi di Modena e Reggio Emilia, via G. Amendola 2-pad, Morselli, Reggio Emilia 42100, Italy
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Journal of Applied Physics | 2009年 / 106卷 / 05期
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