Oriented lapping of SiC wafers

被引：0
|
作者：
Zhao, Shu-Feng [1 ]
Chen, Zhi-Ming [1 ]
Pan, Pan [1 ]
Wang, Huan-Huan [1 ]
机构：
[1] Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2010年 / 39卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：365 / 368
相关论文
共 50 条
  • [21] DEVICES FOR PREPARING ORIENTED CRYSTAL SURFACES BY LAPPING
    NODA, J
    KASAI, T
    IDA, I
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1973, 21 (1-2): : 69 - 76
  • [22] Ultra-Fast Fabrication of <110>-Oriented -SiC Wafers by Halide CVD
    Tu, Rong
    Zheng, Dingheng
    Sun, Qingyun
    Han, Mingxu
    Zhang, Song
    Hu, Zhiying
    Goto, Takashi
    Zhang, Lianmeng
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2016, 99 (01) : 84 - 88
  • [23] Finite Element Analysis for Grinding and Lapping of Wire-sawn Silicon Wafers
    Z J PEI
    X J XIN
    厦门大学学报(自然科学版), 2002, (S1) : 10 - 10
  • [24] SUB-SURFACE CRACK ANALYSIS FOR DIAMOND SLURRY LAPPING OF SAPPHIRE WAFERS
    Chen, Chao-Chang A.
    Tu, Wei-Kang
    Yang, Jyun-Kai
    PROCEEDINGS OF THE ASME 9TH INTERNATIONAL MANUFACTURING SCIENCE AND ENGINEERING CONFERENCE, 2014, VOL 2, 2014,
  • [25] Finite element analysis for grinding and lapping of wire-sawn silicon wafers
    Liu, WJ
    Pei, ZJ
    Xin, XJ
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2002, 129 (1-3) : 2 - 9
  • [26] Spatial characterization of doped SiC wafers
    Burton, JC
    Sun, L
    Pophristic, M
    Li, J
    Long, FH
    Feng, ZC
    Ferguson, I
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 297 - 301
  • [27] Raman imaging analysis of SiC wafers
    Mermoux, M
    Crisci, A
    Baillet, F
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 353 - 356
  • [28] Characterization of SiC wafers by photoluminescence mapping
    Tajima, M.
    Higashi, E.
    Hayashi, T.
    Kinoshita, H.
    Shiomi, H.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 711 - 716
  • [29] High-quality SiC wafers
    Geiger, G
    AMERICAN CERAMIC SOCIETY BULLETIN, 2004, 83 (11): : 4 - 4
  • [30] A Review on the CMP of SiC and Sapphire Wafers
    Wang, Yongguang
    Zhang, L. C.
    ADVANCES IN ABRASIVE TECHNOLOGY XIII, 2010, 126-128 : 429 - 434
12345