Crystal structure analysis of epitaxial BiFeO3-BiCoO3 solid solution films grown by metalorganic chemical vapor deposition

被引：0
|
作者：
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-1508, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
机构：
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 10 B期
关键词：
Epitaxial films;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：6948 / 6951
相关论文
共 50 条
  • [31] Metalorganic chemical vapor deposition of epitaxial perovskite SrIrO3 films on (100)SrTiO3 substrates
    Kim, YK
    Sumi, A
    Takahashi, K
    Yokoyama, S
    Ito, S
    Watanabe, T
    Akiyama, K
    Kaneko, S
    Saito, K
    Funakubo, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (1-3): : L36 - L38
  • [32] Evaluation of metalorganic precursors for preparing BiFeO3 thin films by liquid delivery chemical vapor deposition
    Tasaki, Y.
    Kanoko, T.
    Kabeya, M.
    Chifu, N.
    Yoshizawa, S.
    INTEGRATED FERROELECTRICS, 2006, 81 (281-288) : 281 - 288
  • [33] Structural and optical properties of ZnO epitaxial films grown on Al2O3 (1120) substrates by metalorganic chemical vapor deposition
    Binh, NT
    Zhang, BP
    Liu, CY
    Wakatsuki, K
    Segawa, Y
    Usami, N
    Yamada, Y
    Kawasaki, M
    Koinuma, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (7A): : 4110 - 4113
  • [34] EPITAXIAL-GROWTH OF SRTIO3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    GILBERT, SR
    WESSELS, BW
    STUDEBAKER, DB
    MARKS, TJ
    APPLIED PHYSICS LETTERS, 1995, 66 (24) : 3298 - 3300
  • [35] Residual stress in GaN films grown by metalorganic chemical vapor deposition
    Chen, Y
    Gulino, DA
    Higgins, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (05): : 3029 - 3032
  • [36] Observation of compensation in GaN films grown by metalorganic chemical vapor deposition
    Chen, P
    Chua, SJ
    Zheng, YD
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (06) : 591 - 594
  • [37] Microstructure of epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by metalorganic chemical vapor deposition
    Stemmer, S.
    Bai, G.R.
    Browning, N.D.
    Streiffer, S.K.
    1600, American Inst of Physics, Woodbury, NY, USA (87):
  • [38] Microstructure of epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by metalorganic chemical vapor deposition
    Stemmer, S
    Bai, GR
    Browning, ND
    Streiffer, SK
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) : 3526 - 3531
  • [39] CHARACTERIZATION OF GAAS FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    SWAMINATHAN, V
    VANHAREN, DL
    ZILKO, JL
    LU, PY
    SCHUMAKER, NE
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5349 - 5353
  • [40] ELECTRICAL-PROPERTIES OF EPITAXIAL INDIUM-PHOSPHIDE FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    YANG, JJ
    RUTH, RP
    MANASEVIT, HM
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6729 - 6734
12345