Characterization of photoluminescence of Al-doped hydrothermal ZnO films

被引：0

作者：

Shi, Shiwei ^{[1
,2
,3
]}

Li, Hongxia ^{[1
,2
,3
]}

Jiang, Xishun ^{[1
,2
,3
]}

Sun, Zhaoqi ^{[1
,2
,3
]}

机构：

[1] School of Physics and Material Science, Anhui University, Hefei 230039, China

[2] Key Laboratory of Opto-Electronic Information Acquisition and Manipulation, Ministry of Education, Hefei 230039, China

[3] Anhui Key Laboratory of Information Materials and Devices, Hefei 230039, China

来源：

Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2013年 / 33卷 / 11期

关键词：

Fluorescence quenching - Photoluminescence - II-VI semiconductors - Scanning electron microscopy - Semiconductor doping - Photoluminescence spectroscopy - Nanorods - X ray diffraction - Aluminum;

D O I：

10.3969/j.issn.1672-7126.2013.11.10

中图分类号：

学科分类号：

摘要：

The Al-doped ZnO (AZO) films were synthesized in hydrothermal method on quartz substrates. The films, grown under the optimized conditions, were characterized with X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectroscopy. Two wide peaks of the PL spectrum were observed, one is the ultraviolet (UV)-violet peak, the other is the green-red peaks. The results show that the Al-doping and temperature strongly affect the PL spectra of the films, consisting of the hexagonal, c-axis preferentially orientated, ZnO nano-rod with conical ending. For example, the intensity of UV and violet peaks rose up with an increase of the Al-content, maximizing at Al 10.0% (wt). As the temperature increased from 10 to 267 K, the UV and violet peaks remained almost unchanged, but the green-red emission peaks quenched. Possible mechanisms responsible for the quenching were tentatively discussed.

引用

页码：1105 / 1109

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