Microtribology of silicon, oxide, and carbide surfaces

被引：0
|
作者：
Technische Universität Ilmenau, Institut für Physik, Institut für Mikro-und Nanotechnologien, Postfach 100565, 98684 Ilmenau, Germany [1 ]
不详 [2 ]
不详 [3 ]
机构：
来源：
TriboTest | 2006年 / 2卷 / 175-184期
关键词：
D O I：
10.1002/tt.15
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] THE CHEMISORPTION OF HYDROGEN ON SILICON AND SILICON-CARBIDE (1 0 0) SURFACES
    CRAIG, BI
    SMITH, PV
    PHYSICA B, 1991, 170 (1-4): : 518 - 522
  • [42] Wettability of polished silicon oxide surfaces
    Thomas, RR
    Kaufman, FB
    Kirleis, JT
    Belsky, RA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (02) : 643 - 648
  • [43] Wettability of polished silicon oxide surfaces
    Thomas, Richard R.
    Kaufman, Frank B.
    Kirleis, Juergen T.
    Belsky, Richard A.
    1996, Electrochemical Soc Inc, Pennington, NJ, United States (143)
  • [44] CHARGE MOTION ON SILICON OXIDE SURFACES
    HO, P
    LEHOVEC, K
    FEDOTOWSKY, L
    SURFACE SCIENCE, 1967, 6 (04) : 440 - +
  • [45] Wettability effect of graphene-based surfaces on silicon carbide and their influence on hydrophobicity of nanocrystalline cerium oxide films
    Souza, Jean C.
    Neckel, Itamar T.
    Varalda, Jose
    Ribeiro, Evaldo
    Schreiner, Wido H.
    Mosca, Dante H.
    Sierakowski, Maria-Rita
    Fernandes, Vilmar
    Ouerghi, Abdelkarim
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2015, 441 : 71 - 77
  • [46] DESIGN OF A COMPOSITE MICROTRIBOLOGY EXPERIMENT SYSTEM FOR SILICON SIDEWALLS
    Zhang, Wei
    Shen, Sihan
    Meng, Yonggang
    PROCEEDINGS OF THE STLE/ASME INTERNATIONAL JOINT TRIBOLOGY CONFERENCE, 2010, 2011, : 25 - 27
  • [47] Afterglow Chemical Processing for Oxide Growth on Silicon Carbide
    Hoff, Andrew M.
    Short, Eugene, III
    Thomas, Helen B.
    Oborina, Elena I.
    B - SILICON CARBIDE 2010-MATERIALS, PROCESSING AND DEVICES, 2010, 1246
  • [48] THERMOVACUUM ETCHING OF ALUMINUM OXIDE AND SILICON CARBIDE CRYSTALS
    SAVITSKII, KV
    ILYUSCHE.MA
    BURNAKOV, KK
    BYKONYA, AF
    SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1966, 11 (02): : 309 - +
  • [49] Modeling copper diffusion in silicon oxide, nitride, and carbide
    Zubkov, V
    Han, J
    Sun, G
    Musgrave, C
    Aronowitz, S
    SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY, 2002, 716 : 401 - 406
  • [50] Oxide film assisted dopant diffusion in silicon carbide
    Tin, Chin-Che
    Mendis, Suwan
    Chew, Kerlit
    Atabaev, Ilkham
    Saliev, Tojiddin
    Bakhranov, Erkin
    Atabaev, Bakhtiyar
    Adedeji, Victor
    Rusli
    THIN SOLID FILMS, 2010, 518 (24) : E118 - E120
12345