Temperature dependence of the electron quantum lifetime in InGaAs/GaAs double quantum well: Fukuyama-Abrahams mechanism

被引：0
|
作者：
Gudina, S. V. [1 ]
Arapov, Yu. G. [1 ]
Neverov, V. N. [1 ]
Savelyev, A. P. [1 ]
Sandakov, N. S. [1 ]
Shelushinina, N. G. [1 ]
Yakunin, M. V. [1 ]
机构：
[1] Russian Acad Sci, Inst Met Phys, Ural Branch, 18 S Kovalevskaya St, Ekaterinburg 620108, Russia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2025年 / 165卷
关键词：
Double quantum wells; Quantum lifetime; Electron-electron interaction; Inelastic electron-electron scattering; TILTED MAGNETIC-FIELDS; N-INGAAS/GAAS; FERMI-SURFACE; MAGNETORESISTANCE; MAGNETOTRANSPORT; RESISTANCE; SCATTERING; RESONANCE; CONDUCTIVITY; TRANSPORT;
D O I：
10.1016/j.physe.2024.116113
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In the n-InGaAs/GaAs double quantum well, the suppression of resonant resistance by an in-plane magnetic field B <= 9 T in the temperature range T = (1.8-70) K is studied. The electron quantum lifetime, aq, is determined and the contributions of various scattering mechanisms to aq(T) are separated. It is shown that the observed nonmonotonic temperature dependence of the electron quantum lifetime is due to a combination of the interference contribution from the exchange electron-electron interaction in the ballistic regime and the inelastic electronelectron scattering in the diffusion regime (Fukuyama-Abrahams mechanism).
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页数：6
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