Characterization and preparation of β-FeSi2/Si hetero structure

Hetero structures of β-FeSi2/Si were prepared by DC-magnetron sputtering and vacuum annealing. Firstly, Fe film was deposited on n-type Si(100) substrate at room temperature, subsequently annealed in a vacuum furnace to form β-FeSi2/Si hetero structure. The thickness of Fe and β-FeSi2 was 238 and 720 nm, respectively. The crystal structure, surface topography and optical properties of the β-FeSi2 film were characterized with X-ray diffraction (XRD), scanning electron microscope (SEM) and infrared spectrometer. The electricity and transport properties of β-FeSi2 film were measured by Hall effect. The results indicated that β-FeSi2 film with n-type conducting, the electron concentration was 9.51×1015 cm-3 and the mobility of electrons was 380 cm2/(V&middots).