Characterization and preparation of β-FeSi2/Si hetero structure

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作者：
机构：
[1] Zheng, Xu
[2] Zhang, Jin-Min
[3] Xiong, Xi-Cheng
[4] Zhang, Li-Min
[5] Zhao, Qing-Zhuang
[6] Xie, Quan
来源：
Zhang, J.-M. | 1600年 / Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China卷 / 43期
关键词：
Scanning electron microscopy - Optical properties - Crystal structure - Film preparation - Surface topography - Topography - Vacuum furnaces - X ray diffraction - Transport properties;
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摘要：
Hetero structures of β-FeSi2/Si were prepared by DC-magnetron sputtering and vacuum annealing. Firstly, Fe film was deposited on n-type Si(100) substrate at room temperature, subsequently annealed in a vacuum furnace to form β-FeSi2/Si hetero structure. The thickness of Fe and β-FeSi2 was 238 and 720 nm, respectively. The crystal structure, surface topography and optical properties of the β-FeSi2 film were characterized with X-ray diffraction (XRD), scanning electron microscope (SEM) and infrared spectrometer. The electricity and transport properties of β-FeSi2 film were measured by Hall effect. The results indicated that β-FeSi2 film with n-type conducting, the electron concentration was 9.51×1015 cm-3 and the mobility of electrons was 380 cm2/(V&middots).
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