Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates

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作者：
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan [1 ]
不详 [2 ]
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来源：
Jpn. J. Appl. Phys. | / 4 PART 2卷
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Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
04DF17
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摘要：
Graphene transistors - Leakage currents - Silicon - Substrates - Thermolysis - Drain current - Graphene - Field effect transistors
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