Charge injection in high-κ gate dielectrics of single-walled carbon nanotube thin-film transistors

被引:0
|
作者
Sotera Defense Solutions, Crofton, MD 21114, United States [1 ]
不详 [2 ]
机构
来源
ACS Nano | / 6卷 / 5040-5050期
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
Alumina
引用
收藏
相关论文
共 50 条
  • [31] Adsorption Kinetics of NO2 on Single-Walled Carbon Nanotube Thin-Film Sensor
    Wongwiriyapan, Winadda
    Inoue, Satoshi
    Honda, Shin-ichi
    Katayama, Mitsuhiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (10) : 8145 - 8147
  • [32] The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors
    Xu, Wangying
    Wang, Han
    Ye, Lei
    Xu, Jianbin
    JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (27) : 5389 - 5396
  • [33] Chitosan based dielectrics for use in single walled carbon nanotube-based thin film transistors
    Ronnasi, Bahar
    Tousignant, Mathieu N.
    Lessard, Benoit H.
    JOURNAL OF MATERIALS CHEMISTRY C, 2023, 11 (09) : 3197 - 3205
  • [34] Optimization of single-walled carbon nanotube growth and study of the hysteresis of random network carbon nanotube thin film transistors
    Seung Hyun Hur
    Korean Journal of Chemical Engineering, 2010, 27 : 1892 - 1896
  • [35] Optimization of single-walled carbon nanotube growth and study of the hysteresis of random network carbon nanotube thin film transistors
    Hur, Seung Hyun
    KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2010, 27 (06) : 1892 - 1896
  • [36] THIN-FILM TRANSISTORS WITH GRADED SINX GATE DIELECTRICS
    KUO, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (04) : 1061 - 1065
  • [37] Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics
    C. D. Cress
    J. J. McMorrow
    J. T. Robinson
    A. L. Friedman
    H. L. Hughes
    B. D. Weaver
    B. J. Landi
    MRS Communications, 2011, 1 : 27 - 31
  • [38] Solution-processed single walled carbon nanotube electrodes for organic thin-film transistors
    Southard, Adrian
    Sangwan, Vinod
    Cheng, Jeremy
    Williams, Ellen D.
    Fuhrer, Michael S.
    ORGANIC ELECTRONICS, 2009, 10 (08) : 1556 - 1561
  • [39] Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics
    Cress, C. D.
    McMorrow, J. J.
    Robinson, J. T.
    Friedman, A. L.
    Hughes, H. L.
    Weaver, B. D.
    Landi, B. J.
    MRS COMMUNICATIONS, 2011, 1 (01) : 27 - 31
  • [40] Printed thin-film transistors and complementary logic gates that use polymer-coated single-walled carbon nanotube networks
    Hur, SH
    Kocabas, C
    Gaur, A
    Park, OO
    Shim, M
    Rogers, JA
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)