Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

被引：12

作者：

Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China ^{[1
]}

机构：

来源：

Chin. Phys. | 2007年 / 4卷 / 1101-1104期

关键词：

Atomic force microscopy - Deposition - Fourier transform infrared spectroscopy - Plasma enhanced chemical vapor deposition - Silicon compounds - Surface morphology;

D O I：

10.1088/1009-1963/16/4/040

中图分类号：

学科分类号：

摘要：

This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasma-enhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The variations of O2/ Tetramethyldisiloxane (TMDSO) ratio and input power in radio frequency (RF) plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate (WVTR), oxygen transmission rate (OTR), and atomic force microscopy analysers. It is found that the O2/TMDSO ratio exceeding 2:1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier (WVTR and OTR) properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating. © 2007 Chin. Phys. Soc. and IOP Publishing Ltd.

引用

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