Growth of embedded photonic crystals for GaN-based optoelectronic devices

被引：0
|
作者：
Matioli, Elison [1 ]
Keller, Stacia [2 ]
Wu, Feng [1 ]
Choi, Yong-Seok [1 ]
Hu, Evelyn [1 ,2 ]
Speck, James [1 ]
Weisbuch, Claude [1 ,3 ]
机构：
[1] Materials Department, University of California, Santa Barbara, CA 93106-5050, United States
[2] Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106-9560, United States
[3] Laboratoire de Physique de la Matìre Condense, CNRS, Ecole Polytechnique, 91128 Palaiseau, France
来源：
Journal of Applied Physics | 2009年 / 106卷 / 02期
关键词：
21;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] GaN-based devices on Si
    Krost, A
    Dadgar, A
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2002, 194 (02): : 361 - 375
  • [22] GaN-based devices on Si
    Krost, A.
    Dadgar, A.
    Physica Status Solidi (A) Applied Research, 2002, 194 (2 SPEC.): : 361 - 375
  • [23] Second Harmonic Generation in GaN-based photonic crystals for single molecule investigations
    Coquillat, Dominique
    Torres, Jeremie
    d'Yerville, Marine Le Vassor
    Cassagne, David
    Teppe, Frederic
    Dyakonova, Nina
    Knap, Wojciech
    De La Rue, Richard
    Bouchoule, Sophie
    Margeat, Emmanuel
    Royer, Catherine
    GALLIUM NITRIDE MATERIALS AND DEVICES VII, 2012, 8262
  • [24] Optoelectronic performance of GaN-based UV photodetectors
    Calvani, P.
    Girolami, M.
    Carta, S.
    Rossi, M. C.
    Conte, G.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 610 (01): : 311 - 313
  • [25] Improving Light Extraction Efficiency of GaN-Based LEDs by AlxGa1-xN Confining Layer and Embedded Photonic Crystals
    Gao, Hui
    Li, Kang
    Kong, Fan-Min
    Chen, Xin-Lian
    Zhang, Zhen-Ming
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2012, 18 (06) : 1650 - 1660
  • [26] Current instabilities in GaN-based devices
    Daumiller, I
    Theron, D
    Gaquière, C
    Vescan, A
    Dietrich, R
    Wieszt, A
    Leier, H
    Vetury, R
    Mishra, UK
    Smorchkova, IP
    Keller, S
    Nguyen, NX
    Nguyen, C
    Kohn, E
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (02) : 62 - 64
  • [27] Reliability of GaN-Based HEMT Devices
    Menozzi, Roberto
    COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES, 2008, : 44 - 50
  • [28] Photonic crystal based optoelectronic devices
    Forchel, A
    Kamp, M
    Mahnkopf, S
    Zimmermann, J
    Scherer, H
    2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2004, : 881 - 881
  • [29] Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates
    Orita, Kenji
    Takase, Yuji
    Fukushima, Yasuyuki
    Usuda, Manabu
    Ueda, Tetsuzo
    Takigawa, Shinichi
    Tanaka, Tsuyoshi
    Ueda, Daisuke
    Egawa, Takashi
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (9-10) : 984 - 989
  • [30] GaN-Based Light-Emitting Diodes Integrated With Zinc Oxide Photonic Crystals
    Orita, Kenji
    Hamada, Takahiro
    Itou, Akihiro
    Suzuki, Nobuyasu
    Nagao, Nobuaki
    Tsujimura, Ayumu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (12) : 3364 - 3370
12345