Inverse doping problems for a P-N junction

被引：4
|
作者：
Istituto per le Applicazioni del Calcolo M. Picone, Sez. di Napoli Consiglio Nazionale delle Ricerche, Napoli and INFN-Gruppo c., Cosenza, Italy [1 ]
不详 [2 ]
不详 [3 ]
机构：
来源：
J Inverse Ill Posed Probl | 2006年 / 6卷 / 537-546期
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D O I：
10.1163/156939406778474541
中图分类号：
学科分类号：
摘要：
We consider an inverse problem which arises in the framework of identification of doping profiles for semiconductor devices, based on current measures for varying voltage. We set formally the inverse problem, and study and discuss the main properties of the resulting problem. © VSP 2006.
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