Channel length dependency in Sn: ZnO/ZrO2 thin film transistors: a performance analysis

Herein, we report electronic transport properties of transparent thin film transistors (TFTs) prepared using Sn: ZnO/ZrO2 thin films grown by dc magnetron sputtering. The fabricated devices potentially operate in low voltage mode with a high breakdown electric field. The effect of active channel length on the TFT characteristics is discussed. The high-k ZrO2 thin films were deposited at room temperature and their physical properties and their electrical characteristics such as leakage current and impedance characteristics were investigated prior to TFT fabrication. The fabricated TFTs have exhibited a current on/off ratio 105, a maximum field effect mobility of 18.30 cm(2)(V.s)(-1) and a sub-threshold swing slope of 223 mV/dec. The average optical transmittance of the bilayers was similar to 85% in the visible region. The present results show that the chosen materials are promising for the fabrication of transparent TFTs.