Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices

被引:0
|
作者
Gaunin, Mark-Yves [1 ,2 ,3 ]
Namboodiri, Pradeep [1 ]
Restelli, Alessandro [1 ,2 ,4 ]
Kashid, Ranjit [5 ]
Wang, Xiqiao [6 ]
Fei, Fan [1 ,2 ,4 ]
Courts, Brian [1 ,2 ,4 ]
Pulikodan, Vijith Kamalon [1 ]
Wyrick, Jonathan [1 ]
Silver, Richard [1 ]
机构
[1] NIST, Nanoscale Device Characterizat Div, Phys Measurement Lab, 100 Bur Dr, Gaithersburg, MD 20899 USA
[2] Univ Maryland, JQI, Atlantic Bldg,4254 Stadium Dr, College Pk, MD 20742 USA
[3] Univ Maryland, A James Clark Sch Engn, Dept Elect & Comp Engn, 8223 Paint Branch Dr, College Pk, MD 20742 USA
[4] Univ Maryland, Coll Comp Math & Nat Sci, Dept Phys, 4150 Campus Dr, College Pk, MD 20742 USA
[5] Ctr Mat Elect Technol C MET, Natl Ctr Quantum Mat Technol, Pashan Rd, Pune 411008, Maharashtra, India
[6] Rigetti Comp, 47430 Seabridge Dr, Fremont, CA 94538 USA
来源
基金
美国国家科学基金会;
关键词
DONOR;
D O I
10.1116/6.0004051
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Coherent manipulation of electron spins is one of the central challenges of silicon-based quantum computing efforts. Electron spin resonance (ESR) lines, or Oersted lines, allow 10-60 GHz radio frequency (RF) pulses to induce an electromagnetic field that drives Rabi oscillations in a quantum dot interface. The frequency of these Rabi oscillations is directly proportional to the strength of the induced electromagnetic field. We outline a methodology for the design of a printed circuit board and an ESR line that is able to transmit an RF pulse in the 40 GHz regime and induce an oscillating magnetic field onto a qubit device. We propose and implement a novel design by coupling a second symmetrical Oersted line in the opposing direction of the first to act as an antenna for the purpose of monitoring power and magnetic field strength at the embedded device interface.
引用
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页数:8
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