Temperature Dependent Transient Threshold Voltage Hysteresis in SiC Power MOSFETs and Implications for Short Circuit Events

被引：0
|
作者：
Mengotti, E. [1 ]
Bianda, E. [1 ]
Baumann, D. [1 ]
Papamichalis, E.K. [1 ]
Mihaila, A. [2 ]
Wirths, S. [2 ]
机构：
[1] Abb Switzerland Ltd, Research Center, Baden-Dättwil,5405, Switzerland
[2] Hitachi Abb Power Grids Ltd., Lenzburg,5600, Switzerland
来源：
Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2021年 / 2021-May卷
关键词：
549.3; Others; including Bismuth; Boron; Cadmium; Cobalt; Mercury; Niobium; Selenium; Silicon; Tellurium and Zirconium - 701.1 Electricity: Basic Concepts and Phenomena - 706.1.2 Electric Power Distribution - 713.4 Pulse Circuits - 714.2 Semiconductor Devices and Integrated Circuits - 804.2 Inorganic Compounds - 961 Systems Science;
D O I：
9452290
中图分类号：
学科分类号：
摘要：
Threshold voltage
引用
收藏
页码：259 / 262
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