Spintronic Neuron Using a Magnetic Tunnel Junction for Low-Power Neuromorphic Computing

被引:0
|
作者
Louis, Steven [1 ]
Bradley, Hannah [2 ]
Trevillian, Cody [2 ]
Slavin, Andrei [2 ]
Tiberkevich, Vasil [2 ]
机构
[1] Oakland Univ, Dept Elect & Comp Engn, Rochester, MI 48309 USA
[2] Oakland Univ, Dept Phys, Rochester, MI USA
关键词
Neurons; Magnetization; Magnetic tunneling; Mathematical models; Spintronics; Spin valves; Resistance; Torque; Hardware; Biology; Spin electronics; spintronic neuron; low-power artificial intelligence; machine learning hardware; magnetic memory; magnetoresistive random access memory integration; neuromorphic computing; spiking neural networks; ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I
10.1109/LMAG.2024.3484957
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a novel spiking artificial neuron design based on a combined spin valve/magnetic tunnel junction (SV/MTJ). Traditional hardware used in artificial intelligence and machine learning faces significant challenges related to high power consumption and scalability. To address these challenges, spintronic neurons, which can mimic biologically inspired neural behaviors, offer a promising solution. We present a model of an SV/MTJ-based neuron that uses technologies that have been successfully integrated with CMOS in commercially available applications. The operational dynamics of the neuron are derived analytically through the Landau-Lifshitz-Gilbert-Slonczewski equation, demonstrating its ability to replicate key spiking characteristics of biological neurons such as response latency and refractive behavior. Simulation results indicate that the proposed neuron design can operate on a timescale of about 1 ns, without any bias current and with power consumption as low as 50 mu W.
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页数:5
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