Enhancing superconductivity in CoSi2 films with laser annealing

被引：0
|
作者：
Dumas, P. [1 ]
Gustavo, F. [1 ]
Opprecht, M. [1 ]
Freychet, G. [1 ]
Gergaud, P. [1 ]
Kerdilès, S. [1 ]
Guillemin, S. [1 ]
Lábár, J.L. [2 ]
Pécz, B. [2 ]
Lefloch, F. [3 ]
Nemouchi, F. [1 ]
机构：
[1] Université Grenoble Alpes, CEA LETI, Grenoble,38000, France
[2] Institute for Technical Physics and Materials Science, HUN-REN Centre for Energy Research, Budapest,1121, Hungary
[3] Université Grenoble Alpes, CEA IRIG, Grenoble,38000, France
来源：
Journal of Applied Physics | 1600年 / 136卷 / 10期
关键词：
Rapid thermal annealing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Doppler broadening spectroscopy studies of CoSi2 films
    Wissman, BD
    Dull, TL
    Frieze, WE
    Gidley, DW
    Skalsey, M
    SOLID STATE COMMUNICATIONS, 1998, 105 (03) : 165 - 168
  • [22] Effect of CoSi2 interfacial layer on the magnetic properties of Si|CoSi2|Sm-Co thin films
    Saravanan, P.
    Boominathasellarajan, S.
    Sobel, Bartlomiej
    Waclawek, Stanislaw
    Vinod, V. T. P.
    Cernik, Miroslav
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2020, 493
  • [23] CONTROL OF PINHOLE FORMATION IN EPITAXIAL COSI2 FILMS
    HUNT, BD
    LEWIS, N
    HALL, EL
    ROBERTSON, CD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 749 - 750
  • [24] INSITU STUDIES OF THE CRYSTALLIZATION OF AMORPHOUS COSI2 FILMS
    SMITH, DA
    TU, KN
    WEISS, BZ
    ULTRAMICROSCOPY, 1989, 30 (1-2) : 90 - 96
  • [25] FORMATION OF THIN-FILMS OF COSI2 ON GAAS
    HULT, M
    PERSSON, L
    ELBOUANANI, M
    ANDERSSON, M
    OSTLING, M
    LUNDBERG, N
    ZARING, C
    GEORGSSON, K
    COHEN, DD
    DYTLEWSKI, N
    JOHNSTON, PN
    WALKER, SR
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) : 2435 - 2443
  • [26] Solid solubility of As in CoSi2 and redistribution at the CoSi2/Si interface
    Mangelinck, D
    Cardenas, J
    d'Heurle, FM
    Svensson, BG
    Gas, P
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (09) : 4908 - 4915
  • [27] Formations and morphological stabilities of ultrathin CoSi2 films
    Zhu Zhi-Wei
    Gao Xin-Dong
    Zhang Zhi-Bin
    Piao Ying-Hua
    Hu Cheng
    Zhang David-Wei
    Wu Dong-Ping
    CHINESE PHYSICS B, 2012, 21 (08)
  • [28] ACTIVATION-ENERGY FOR COSI AND COSI2 FORMATION MEASURED DURING RAPID THERMAL ANNEALING
    COLGAN, EG
    CABRAL, C
    KOTECKI, DE
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) : 614 - 619
  • [29] Effect of Substrate Type on CoSi2 Formation in Rapid Thermal Annealing
    Kim, Eun Jeong
    Lee, Jin Yul
    Kim, Sang Deok
    Song, Han Sang
    Yeom, Seung Jin
    Ishigaki, Toshikazu
    Kang, Kitaek
    Yoo, Woo Sik
    SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6, 2016, 72 (04): : 211 - 218
  • [30] FORMATION OF EPITAXIAL COSI2 ON SI(100) - ROLE OF THE ANNEALING AMBIENT
    VANTOMME, A
    NICOLET, MA
    BAI, G
    FRASER, DB
    APPLIED PHYSICS LETTERS, 1993, 62 (03) : 243 - 245
12345