Simulation Challenges of SiC MOSFET Switching Performance and Reliability

被引：0
|
作者：
Victory, James [1 ]
Guitart, Jaume Roig [2 ]
Krishna, Rishi [3 ]
Jia, Kan [4 ]
Zurek, Dan [5 ]
Betak, Petr [6 ]
He, Canzhong [7 ]
Lehocky, Jiri [5 ]
机构：
[1] Power Solution Group Onsemi, Phoenix, United States
[2] Power Solution Group Onsemi, Oudenaarde, Belgium
[3] Power Solution Group Onsemi, Kista, Sweden
[4] Power Solution Group Onsemi, Shanghai, China
[5] Power Solution Group Onsemi, Brno, Czech Republic
[6] Power Solution Group Onsemi, Roznov, Czech Republic
[7] Power Solution Group Onsemi, Mountain Top, United States
来源：
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | 2023年
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Silicon carbide
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收藏
页码：5 / 8
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