Design of a Broadband and High-Isolation CMOS Active Quasi-Circulator

Using industry standard TSMC 90 nm CMOS technology, a broadband and high-isolation active quasi-circulator MMIC was fabricated to meet the needs of future communication system integration. An active balun and phase inverter stage made of a common-source (CS) field-effect transistor (FET) comprised the quasi-circulator that was suggested. A cascade CS stage was used to produce the active balun, which increased the isolation of |S12| and |S23| through the unilateral characteristic of the FET and allowed for transmission of |S21| and |S32|. Further, a CS FET connected in parallel to ports 1 and 3 for phase cancellation can effectively increase the quasi-circulator's isolation |S31|. Theoretical analysis for the detailed circuit was shown in the main paper. The results show that all isolations are better than 20 dB over 5-33 GHz, and the measured findings reveal that the suggested quasi-circulator has an insertion loss of less than 10 dB. It is possible to reach an isolation level of 55 dB between ports 1 and 3, which is greater than present research.