Paraelectric Doping Simultaneously Improves the Field Frequency Adaptability and Dielectric Properties of Ferroelectric Materials: A Phase-Field Study

Recent years, the polarization response of ferroelectrics has been entirely studied. However, it is found that the polarization may disappear gradually with the continually applied of electric field. In this paper, taking K0.48Na0.52NbO3(KNN) as an example, it was demonstrated that the residual polarization began to decrease when the electric field frequency increased to a certain extent using a phase-field methods. The results showed that the content of out-of-plane domains increased first and then decreased with the increase of applied electric field frequency, the maximum polarization disappeared at high frequencies, and the hysteresis loop became elliptical. In order to further study the abnormal changes of hysteresis loops of ferroelectrics under high electric field frequency, we analyzed the hysteresis loop and dielectric response of solid solution 0.1SrTiO3-0.9K0.48Na0.52NbO3. It was found that the doped hysteresis loop maintained its shape at higher frequency and the dielectric constant increased. This kind of doping has a higher field frequency adaptability, which has a key guiding role in improving the dielectric properties of ferroelectric thin films and expanding the frequency application range of ferroelectric nano memory.