Accurate Layer-Number Determination of Hexagonal Boron Nitride Using Optical Characterization

被引:0
|
作者
Zhang, Tianyu [1 ,2 ]
Qiao, Shuang [3 ,4 ]
Xue, Hongxia [1 ,2 ]
Wang, Zhongqi [5 ]
Yao, Chengdong [3 ]
Wang, Xiong [1 ]
Feng, Kai [1 ]
Li, Lain-Jong [1 ,3 ]
Ki, Dong-Keun [1 ,2 ]
机构
[1] Univ Hong Kong, Dept Phys, Hong Kong 999077, Peoples R China
[2] Univ Hong Kong, HK Inst Quantum Sci & Technol, Hong Kong 999077, Peoples R China
[3] Univ Hong Kong, Dept Mech Engn, Hong Kong 999077, Peoples R China
[4] Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China
[5] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong 999077, Peoples R China
基金
国家重点研发计划;
关键词
hexagonal boron nitride; layer number determination; optical contrast analysis; second harmonic generation; GRAPHENE; IDENTIFICATION;
D O I
10.1021/acs.nanolett.4c04241
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Precise determination of the layer number (N) of hexagonal boron nitride (hBN) is crucial for its integration with other layered materials in applications such as ferroelectric devices and moire potential modulation. We present a nondestructive method to accurately identify N, combining optical contrast analysis with second harmonic generation (SHG) measurements. By studying the flakes on 90 nm thick SiO2/Si substrates, we demonstrate that red-filtered optical images provide a clear contrast step in N with an uncertainty of +/- 1 layer, while SHG measurements further reduce the error by distinguishing even and odd layers. We also introduce a real-time detection technique to identify monolayer and few-layer hBN, improving flake identification efficiency. Given the growing interest in twisted hBN interfaces and their integration in van der Waals heterostructures, this method offers a practical approach for future studies.
引用
收藏
页码:14774 / 14780
页数:7
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