Negative longitudinal piezoelectric effect and electric auxetic effect in ferroelectric HfO2 and related fluorite-structure ferroelectrics

被引:1
|
作者
Zhang, Shenglong [1 ]
Zhao, Ling-Xu [2 ,3 ]
Ji, Can [1 ]
Yang, Jia-Yue [2 ,3 ]
Liu, Linhua [2 ,3 ]
机构
[1] Qilu Univ Technol, Energy Res Inst, Shandong Acad Sci, Jinan 250014, Peoples R China
[2] Shandong Univ, Sch Energy & Power Engn, Jinan 250061, Peoples R China
[3] Shandong Univ, Inst Frontier & Interdisciplinary Sci, Qingdao 266237, Peoples R China
基金
中国国家自然科学基金;
关键词
This study was supported by the National Natural Science Foundation of China (Grant No. 52076123); the Shandong Provincial Natural Science Foundation (Grant Nos. ZR2023ZD18 and ZR2024QE499); the Collaborative Innovation Project of Colleges in Jinan (Grant Nos. 2021GXRC045 and 202333013); and the Science; Education & Industry Integration Program of Qilu University of Technology (Grant Nos. 2023PX067 and 2022JBZ02-03). We acknowledge Professor Jian Liu of Shandong University for his kind guidance and help. J.L. was supported by the National Natural Science Foundation of China (Grant No. 11904202);
D O I
10.1063/5.0239212
中图分类号
O59 [应用物理学];
学科分类号
摘要
Unusual negative longitudinal piezoelectric effect (NLPE) and electric auxetic effect (EAE) have essential implications for designs of piezoelectric sensors and actuators. The emerging ferroelectric HfO2 is recently discovered to have both effects, while the underlying physical mechanisms remain elusive. To understand and regulate these intriguing effects, it is crucial to investigate the piezoelectricity in ferroelectric HfO2 and related fluorite-structure ferroelectrics. Here, we corroborate using first-principles calculations that all twelve fluorite-structure ferroelectrics covered in this study possess the NLPE. A chemical tendency of piezoelectricity is demonstrated, i.e., the larger the "iconicity," the stronger the NLPE. The structural origin is attributed to the predominant influence of the triple-coordinated anion displacement, namely, the more "ionic" fluorite-structure ferroelectrics exhibit larger anion displacement under a pressure or strain, which gives rise to a more negative internal-strain contribution dominating over the positive clamped-ion contribution and hence a stronger NLPE. Moreover, we confirm several electric auxetic materials in fluorite-structure ferroelectrics with finite electric field calculations. We find that the piezoelectricity of electric auxetic materials is suppressed by the external electric field along the polar direction, since it weakens the bonding heterogeneity. The unraveled fundamental understanding of the NLPE and EAE in this study may profoundly benefit the design and application of fluorite-structure ferroelectrics.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Inhibiting the imprint effect of the TiN/HZO/TiN ferroelectric capacitor by introducing a protective HfO2 layer
    Yu, Shihao
    Zhang, Yefan
    Yang, Peng
    Luo, Xiaopeng
    Sun, Zhenyuan
    Liu, Haijun
    Liu, Sen
    AIP ADVANCES, 2024, 14 (08)
  • [42] Experimental study of threshold voltage shift for Si:HfO2 based ferroelectric field effect transistor
    Jung, Taehwan
    Shin, Changhwan
    NANOTECHNOLOGY, 2021, 32 (37)
  • [43] Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO2 Thin Films
    Li, Zhenhai
    Wang, Tianyu
    Liu, Yongkai
    Yu, Jiajie
    Meng, Jialin
    Liu, Pei
    Xu, Kangli
    Zhu, Hao
    Sun, Qingqing
    Zhang, David Wei
    Chen, Lin
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (01) : 56 - 59
  • [44] Effect of Ce doping on ferroelectric HfO2 from first-principles: Implications for ferroelectric thin films and phase regulation
    Tian, Yushui
    Zhou, Yulu
    Zhao, Miao
    Ouyang, Yifang
    Tao, Xiaoma
    JOURNAL OF SOLID STATE CHEMISTRY, 2023, 328
  • [45] An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors
    Pujar, Pavan
    Cho, Haewon
    Kim, Young-Hoon
    Zagni, Nicolo
    Oh, Jeonghyeon
    Lee, Eunha
    Gandla, Srinivas
    Nukala, Pavan
    Kim, Young-Min
    Alam, Muhammad Ashraful
    Kim, Sunkook
    ACS NANO, 2023, 17 (19) : 19076 - 19086
  • [46] EFFECT OF GATE ELECTRODES ON STRUCTURE AND ELECTRICAL PROPERTIES OF SPUTTERED HfO2 THIN FILMS
    Dong, Ming
    Wang, Hao
    Shen, Liangping
    Ye, Cong
    Wei, Qinxiang
    MODERN PHYSICS LETTERS B, 2012, 26 (25):
  • [47] Effect of biasing at elevated temperature on the electronic structure of Pt/HfO2/Si stacks
    Matveyev, Yu.
    Zenkevich, A.
    Lebedinskii, Yu.
    Thiess, S.
    Drube, W.
    MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1353 - 1356
  • [48] Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric
    Wang, S. J.
    Chai, J. W.
    Dong, Y. F.
    Feng, Y. P.
    Sutanto, N.
    Pan, J. S.
    Huan, A. C. H.
    APPLIED PHYSICS LETTERS, 2006, 88 (19)
  • [49] The effect of HfO2 on the magnetic anisotropy, electrical structure and microstructure of CoFeB/MgO films
    Li, Minghua
    Shi, Hui
    Chen, Xi
    Fang, Shuai
    Han, Gang
    Zhao, Chongjun
    Zhang, Peng
    Wang, Baoyi
    Cao, Xingzhong
    Wang, Dongwei
    Yu, Guanghua
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 725 : 425 - 432
  • [50] Effect of Oxygen Vacancy on the Electronic Structure and Electrical Properties of HfO2/Si Interface
    Yao, Jiachi
    Qu, Guanghao
    Zhao, Zhonghua
    Zhang, Guowei
    Min, Daomin
    Liu, Jie
    Li, Shengtao
    PROCEEDINGS OF 2020 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS (ISEIM 2020), 2020, : 425 - 428