共 50 条
- [46] EFFECT OF GATE ELECTRODES ON STRUCTURE AND ELECTRICAL PROPERTIES OF SPUTTERED HfO2 THIN FILMS MODERN PHYSICS LETTERS B, 2012, 26 (25):
- [50] Effect of Oxygen Vacancy on the Electronic Structure and Electrical Properties of HfO2/Si Interface PROCEEDINGS OF 2020 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS (ISEIM 2020), 2020, : 425 - 428