Physical properties of La:ZnO thin films prepared at different thicknesses using spray pyrolysis technique

被引:0
|
作者
Alsaiari, Norah A. [1 ]
Awad, Abanoub A. [2 ]
Ismail, Motaz F. [2 ]
Aboud, Ahmed A. [2 ]
机构
[1] Najran Univ, Coll Sci & Art Sharurah, Dept Chem, Najran, Saudi Arabia
[2] Beni Suef Univ, Fac Sci, Dept Phys, Bani Suwayf 62514, Egypt
关键词
La:ZnO; thicknesses; spray pyrolysis; UV sensing; DOPED ZNO NANOPARTICLES; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; LA; SOLUBILITY; SURFACE; AL;
D O I
10.1088/1402-4896/ad79c1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Herein we investigate the impact of film thickness on the physical properties of Lanthanum (La) doped ZnO thin films. The films were fabricated using the spray pyrolysis technique with a consistent La content of 5 weight (wt) % in the initial solution. X-ray diffraction analysis indicated the presence of a hexagonal ZnO phase with preferred orientation along the (002) direction and no other phases were detected. The crystallite sizes were calculated using the Halder-Wagner equation, with a maximum size of 16.1 nm observed for a film thickness of 106 nm. Field-emission scanning electron microscopy (FE-SEM) images revealed the formation of a continuous film with an average grain size that increased as the thickness of the film increased. The grain size ranged from 74.5 to 136 nm as the film thickness varied from 106 to 426 nm. Films with lower thicknesses up to 196 nm exhibited two band gaps at approximately 3.2 and 4 eV, while films with higher thicknesses displayed a single band gap around 3.2 eV. The refractive index dispersion for all films was modeled using the Cauchy model, with parameters showing high dependence on the thickness values.The refractive index at high frequency, as calculated using the Cauchy model, was observed to decrease with increasing film thickness, ranging from 1.87 at 106nm to 1.63 at 426nm. Similar values were obtained by fitting the optical refractive index data with the Wemple-DiDomenico relation. Additionally, the UV sensing performance of the films was evaluated against UV light of a single wavelength (365 nm) at applied voltages of 10, 20, and 30V. The rise and decay times were measured, with the film thickness of 426 nm exhibiting the shortest rise and decay times at a specific applied voltage.
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页数:18
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