AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

被引：0
|
作者：
Shen, Guowen [1 ,2 ]
Lu, Lin [1 ,2 ]
Xu, Fujun [3 ]
Lyu, Chen [1 ,2 ]
Gao, Wengen [1 ,2 ]
Dai, Guangzhen [1 ,2 ]
机构：
[1] Key Laboratory of Advanced Perception and Intelligent Control of High-end Equipment, Ministry of Education, Anhui Polytechnic University, Wuhu,241000, China
[2] School of Electrical Engineering, Anhui Polytechnic University, Wuhu,241000, China
[3] Research Center for Wide Gap Semiconductor, School of Physics, Peking University, Beijing,100871, China
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2024年 / 45卷 / 07期
关键词：
20;
D O I：
10.37188/CJL.20240045
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1156 / 1162
相关论文
共 50 条
  • [21] Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer
    Zhao, Fengyi
    Jia, Wei
    Dong, Hailiang
    Jia, Zhigang
    Li, Tianbao
    Yu, Chunyan
    Zhang, Zhuxia
    Xu, Bingshe
    AIP ADVANCES, 2022, 12 (12)
  • [22] Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer
    Li, Guang
    Wang, Lin-Yuan
    Song, Wei-Dong
    Jiang, Jian
    Luo, Xing-Jun
    Guo, Jia-Qi
    He, Long-Fei
    Zhang, Kang
    Wu, Qi-Bao
    Li, Shu-Ti
    CHINESE PHYSICS B, 2019, 28 (05)
  • [23] AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
    Hirayama, Hideki
    Kamata, Norihiko
    Tsubaki, Kenji
    III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION, 2017, 133 : 267 - 299
  • [24] Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer
    李光
    王林媛
    宋伟东
    姜健
    罗幸君
    郭佳琦
    贺龙飞
    张康
    吴启保
    李述体
    Chinese Physics B, 2019, (05) : 365 - 369
  • [25] Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency
    Usman, Muhammad
    Jamil, Tariq
    Malik, Shahzeb
    Jamal, Habibullah
    OPTIK, 2021, 232
  • [26] Improved performance of N-face AlGaN-based deep ultraviolet light-emitting diodes with superlattice electron blocking layer
    F. Xie
    F. X. Wang
    Applied Physics A, 2016, 122
  • [27] Improved performance of N-face AlGaN-based deep ultraviolet light-emitting diodes with superlattice electron blocking layer
    Xie, F.
    Wang, F. X.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (08):
  • [28] Development of AlGaN-based deep ultraviolet light-emitting diodes and laser diodes
    Guo, Yanan
    Zhang, Yun
    Wang, Junxi
    Yan, Jianchang
    Tian, Yingdong
    Chen, Xiang
    Sun, Lili
    Wei, Tongbo
    Li, Jinmin
    2015 12TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA), 2015, : 4 - 7
  • [29] Enhanced characteristics in AlGaN-based deep ultraviolet light-emitting diodes with interval-graded barrier superlattice electron blocking layers
    Jiang, Zhiang
    Zhu, Youhua
    Xia, Changsheng
    Sheng, Yang
    Li, Yi
    MICRO AND NANOSTRUCTURES, 2024, 191
  • [30] AlGaN-based deep ultraviolet light emitting diodes with reflection layer
    Khizar, M.
    Raja, Yasin M. Akhtar
    GALLIUM NITRIDE MATERIALS AND DEVICES II, 2007, 6473
12345