AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

被引：0
|
作者：
Shen, Guowen [1 ,2 ]
Lu, Lin [1 ,2 ]
Xu, Fujun [3 ]
Lyu, Chen [1 ,2 ]
Gao, Wengen [1 ,2 ]
Dai, Guangzhen [1 ,2 ]
机构：
[1] Key Laboratory of Advanced Perception and Intelligent Control of High-end Equipment, Ministry of Education, Anhui Polytechnic University, Wuhu,241000, China
[2] School of Electrical Engineering, Anhui Polytechnic University, Wuhu,241000, China
[3] Research Center for Wide Gap Semiconductor, School of Physics, Peking University, Beijing,100871, China
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2024年 / 45卷 / 07期
关键词：
20;
D O I：
10.37188/CJL.20240045
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1156 / 1162
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