Quasiperiodic Moire Reconstruction and Modulation of Electronic Properties in Twisted Bilayer Graphene Aligned with Hexagonal Boron Nitride

被引:0
|
作者
Li, Si-yu [1 ,2 ]
Xu, Zhiyue [3 ]
Wang, Yingbo [2 ]
Han, Yingzhuo [2 ]
Watanabe, Kenji [5 ]
Taniguchi, Takashi [6 ]
Song, Aisheng [3 ]
Ma, Tian-Bao [3 ]
Gao, Hong-Jun [1 ,2 ]
Jiang, Yuhang [4 ]
Mao, Jinhai [2 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
[3] Tsinghua Univ, State Key Lab Tribol Adv Equipment, Beijing 100084, Peoples R China
[4] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[5] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan
[6] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan
基金
国家重点研发计划; 中国博士后科学基金; 中国国家自然科学基金;
关键词
MAGIC-ANGLE; UNCONVENTIONAL SUPERCONDUCTIVITY; INSULATORS; STATES;
D O I
10.1103/PhysRevLett.133.196401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Twisted van der Waals systems have emerged as intriguing arenas for exploring exotic strongly correlated and topological physics, with structural reconstruction and strain playing essential roles in determining their electronic properties. In twisted bilayer graphene aligned with hexagonal boron nitride (TBG/h-BN), the interplay between the two sets of moire<acute accent> patterns from graphene-graphene (G-G) and graphene-h-BN (G - h-BN) interfaces can trigger notable moire<acute accent> pattern reconstruction (MPR). Here, we present the quasiperiodic MPR in the TBG/h-BN with two similar moire<acute accent> wavelengths, wherein the MPR results from the incommensurate mismatch between the wavelengths of the G-G and G - h-BN moire<acute accent> patterns. The short-range, nearly ordered moire<acute accent> super-superstructures deviate from moire<acute accent> quasicrystal and are accompanied by inhomogeneous strain, thereby inducing spatially variable energy separations between the Van Hove singularities (VHs) in the band structures of the TBG near the magic angle. By tuning the carrier densities in our sample, correlated gaps at specific AA sites are observed, uncovering the quantumdot-like behavior and incoherent characteristics of the AA sites in the TBG. Our findings would give new hints on the microscopic mechanisms underlying the abundant novel quantum phases in the TBG/h-BN.
引用
收藏
页数:6
相关论文
共 50 条
  • [31] Mechanical and electronic properties of lateral graphene and hexagonal boron nitride heterostructures
    Ge, Mei
    Si, Chen
    CARBON, 2018, 136 : 286 - 291
  • [32] Enhanced electron-phonon coupling in doubly aligned hexagonal boron nitride bilayer graphene heterostructure
    Kuiri, Manabendra
    Srivastav, Saurabh Kumar
    Ray, Sujay
    Watanabe, Kenji
    Taniguchi, Takashi
    Das, Tanmoy
    Das, Anindya
    PHYSICAL REVIEW B, 2021, 103 (11)
  • [33] Effective lattice model of graphene moire superlattices on hexagonal boron nitride
    Lin, Xianqing
    Ni, Jun
    PHYSICAL REVIEW B, 2019, 100 (19)
  • [34] Moire patterns and inversion boundaries in graphene/hexagonal boron nitride bilayers
    Elder, K. R.
    Huang, Zhi-Feng
    Ala-Nissila, Tapio
    PHYSICAL REVIEW MATERIALS, 2023, 7 (02)
  • [35] Moire band model and band gaps of graphene on hexagonal boron nitride
    Jung, Jeil
    Laksono, Evan
    DaSilva, Ashley M.
    MacDonald, Allan H.
    Mucha-Kruczynski, Marcin
    Adam, Shaffique
    PHYSICAL REVIEW B, 2017, 96 (08)
  • [36] Percolation transitions in bilayer graphene encapsulated by hexagonal boron nitride
    Cobaleda, C.
    Pezzini, S.
    Rodriguez, A.
    Diez, E.
    Bellani, V.
    PHYSICAL REVIEW B, 2014, 90 (16)
  • [37] Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride
    Lee, Kayoung
    Liu, En-Shao
    Watanabe, Kenji
    Taniguchi, Takashi
    Nah, Junghyo
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (48) : 40985 - 40989
  • [38] Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlattices
    Iwasaki, Takuya
    Morita, Yoshifumi
    Nakaharai, Shu
    Wakayama, Yutaka
    Watanabe, Eiichiro
    Tsuya, Daiju
    Watanabe, Kenji
    Taniguchi, Takashi
    Moriyama, Satoshi
    APPLIED PHYSICS EXPRESS, 2020, 13 (03)
  • [39] Moire flat bands and antiferroelectric domains in lattice relaxed twisted bilayer hexagonal boron nitride under perpendicular electric fields
    Li, Fengping
    Lee, Dongkyu
    Leconte, Nicolas
    Javvaji, Srivani
    Kim, Young Duck
    Jung, Jeil
    PHYSICAL REVIEW B, 2024, 110 (15)
  • [40] Influence of Hexagonal Boron Nitride on Electronic Structure of Graphene
    Liu, Jingran
    Luo, Chaobo
    Lu, Haolin
    Huang, Zhongkai
    Long, Guankui
    Peng, Xiangyang
    MOLECULES, 2022, 27 (12):